为解决空间应用的延迟锁相环中压控延迟线易受单粒子扰动问题
提出了一种加固的压控延迟线结构。在分析了传统压控延时单元的单粒子敏感性基础上
通过在延时单元的输出节点之间增加2个NMOS管和2个PMOS管形成正反馈结构
提高了延时单元的抗单粒子瞬态特性。在输入参考时钟为1 GHz时
先通过计算机辅助设计技术(TCAD)混合仿真验证了该单元的加固效果:当LET值?
1
为20 MeV·cm
2
/mg时
提出的加固结构将电压扰动幅度降低了44.9%;当LET值?
2
为80 MeV·cm
2
/mg时
翻转电压降低幅度为23.7%。再基于Spice仿真
验证了在延迟锁相环实际工作的锁定状态下
该结构起到了抑制压控延迟线中单粒子瞬态的作用。仿真结果表明
对比传统的加固方法
提出的加固压控延迟线结构在只付出13.6%的面积增加代价下
在533 MHz~1 GHz的频率范围内实现了对两种LET值下的单粒子瞬态免疫。
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