GaAs光导开关电极制备工艺及性能测试

您当前的位置：

首页 >

文章列表页 >

GaAs光导开关电极制备工艺及性能测试

更新时间：2025-05-08

- GaAs光导开关电极制备工艺及性能测试
- Preparation Technology and Performance Test of GaAs Photoconductive Semiconductor Switch Electrodes
- 西安交通大学学报 2022年56卷第2期页码：184-190
- 作者机构：
  
  西安交通大学电子与信息学部,西安,710049
- 作者简介：
- 基金信息：
  
  : 2021-05-12。作者简介: 党鑫(1995—),女,硕士生;胡龙(通信作者),男,副研究员。基金项目: 国家自然科学基金资助项目(51707162);强脉冲辐射环境模拟与效应国家重点实验室基金资助项目(SKLIPR 2004)
- DOI：10.7652/xjtuxb202202019
  中图分类号： TN305
- 网络首发：2022-02-10，
  
  纸质出版：2022
- 稿件说明：
移动端阅览
党鑫, 杨向红, 孙岳, 等. GaAs光导开关电极制备工艺及性能测试[J]. 西安交通大学学报, 2022,56(2):184-190.

Preparation Technology and Performance Test of GaAs Photoconductive Semiconductor Switch Electrodes[J]. 2022, 56(2): 184-190.
党鑫, 杨向红, 孙岳, 等. GaAs光导开关电极制备工艺及性能测试[J]. 西安交通大学学报, 2022,56(2):184-190. DOI： 10.7652/xjtuxb202202019.

Preparation Technology and Performance Test of GaAs Photoconductive Semiconductor Switch Electrodes[J]. 2022, 56(2): 184-190. DOI： 10.7652/xjtuxb202202019.

摘要

为了解决目前GaAs光导开关成品率低、稳定性差和可靠性低等问题

提出了GaAs光导开关的关键电极制备工艺解决方案。该方案首先以半绝缘GaAs材料作为衬底

利用电子束蒸镀机在GaAs衬底上沉积Ni/Ge/Au/Ni/Au金属复合层作为光导开关电极

并对电极进行快速退火使其与GaAs衬底形成欧姆接触; 然后

为了隔绝光导开关与外界环境

在GaAs衬底上沉积氮化硅作为钝化保护层; 最后

通过在欧姆接触电极上外延场板的工艺

制备出电极间距为4 mm的异面GaAs光导开关。对所制备的GaAs光导开关的测试结果表明:在400 ℃退火条件下

电极的接触电阻率最低可达到0.019 5 Ω•cm

2

; 采用50 Ω单脉冲形成线

在工作频率为1 kHz、偏置电压为22 kV时

光导开关的输出电压脉冲为10 kV

脉冲上升时间为亚ns量级。采用该制备方法制备的GaAs光导开关的成品率高达约98%

可稳定工作上万次。

Abstract

A key electrode preparation process solution of GaAs photoconductive semiconductor switch is proposed to solve the current problems of low yield

poor stability and low reliability of GaAs photoconductive semiconductor switches. In this scheme

the semi-insulating GaAs material is firstly used as substrate

and the Ni/Ge/Au/Ni/Au metal composite layer is deposited on GaAs substrate by electron beam evaporation machine as electrode of GaAs photoconductive semiconductor switch

and then the electrode is annealed quickly to form ohmic contact with the GaAs substrate; then

in order to isolate the photoconductive semiconductor switch from the external environment

silicon nitride is deposit

ed on the GaAs substrate as a passivation protective layer; finally

a GaAs photoconductive semiconductor switch with 4 mm gap between two bilateral electrodes is fabricated by epitaxial field plate on ohmic contact electrode. Test results of the GaAs photoconductive semiconductor switch show that the minimum specific contact resistivity of the electrode can reach 0.019 5 Ω•cm

2

when annealed at 400 ℃; When the single pulse forming line of 50 Ω is adopted

the operating frequency is 1 kHz and the bias voltage is 22 kV

the output voltage pulse of photoconductive semiconductor switch is 10 kV and the pulse rise time is sub ns. The yield of GaAs photoconductive semiconductor switch prepared by this preparation method is about 98%

and it can work stably for tens of thousands of times.

关键词

Keywords

references

MAJDA-ZDANCEWICZ E, SUPRONIUK M, PAWOWSKI M, et al. Current state of photoconductive semiconductor switch engineering [J]. Opto-Electronics Review, 2018, 26(2): 92-102.

刘毅, 谌怡, 夏连胜, 等. GaAs-PCSS多通道同步导通条件实验研究 [J]. 强激光与粒子束, 2020, 32(2): 025005.

LIU Yi, SHEN Yi, XIA Liansheng, et al. Experimental study on multi-channel synchronous conduction conditions of GaAs-PCSS [J]. High Power Laser and Particle Beams, 2020, 32(2): 025005.

RAKHEJA S, HUANG L, HAU-RIEGE S, et al. Performance modeling of silicon carbide photoconductive switches for high-power and high-frequency applications [J]. IEEE Journal of the Electron Devices Society, 2020, 8: 1118-1128.

WU Qilin, XUN Tao, ZHAO Yuxin, et al. The test of a high-power, semi-insulating, linear-mode, vertical 6H-SiC PCSS [J]. IEEE Transactions on Electron Devices, 2019, 66(4): 1837-1842.

XU Ming, DONG Hangtian, LIU Chun, et al. Investigation of an opposed-contact GaAs photoconductive semiconductor switch at 1-kHz excitation [J]. IEEE Transactions on Electron Devices, 2021, 68(5): 2355-2359.

GADDY M, KURYATKOV V, WILSON N, et al. GaN-based PCSS with high breakdown fields [J]. Electronics, 2021, 10(13): 1600.

HU Long, WANG Yaogong, XU Ming, et al. Experimental study of recovery time of a bulk gallium arsenide avalanche semiconductor switch in low-energy-triggered mode [J]. Electronics Letters, 2019, 55(12): 711-712.

ZHANG Lin, SHI Wei, CAO Juncheng, et al. Research on time jitter of GaAs photoconductive semiconductor switches in the negative differential mobility region [J]. IEEE Electron Device Letters, 2019, 40(2): 291-294.

MA Cheng, SHI Wei, DONG Chengang, et al. 998 multiplication rate of GaAs avalanche semiconductor switch triggered by 0.567 nJ [J]. IEEE Access, 2020, 8: 116515-116519.

MA Cheng, XU Nuo, LIU Zenan, et al. 1.5-kA GaAs avalanche semiconductor switch triggered by 4 μJ laser diode [J]. IEEE Journal of the Electron Devices Society, 2020, 8: 223-228.

桂淮濛, 施卫. 储能电容对GaAs光电导开关快前沿正负对称脉冲输出特性的影响 [J]. 物理学报, 2019, 68(19): 194206.

GUI Huaimeng, SHI Wei. Effect of capacitance on positive and negative symmetric pulse with fast rising edge based on GaAs photoconductive semiconductor switch [J]. Acta Physica Sinica, 2019, 68(19): 194206.

HU Long, SU Jiancang, QIU Ruicheng, et al. Ultra-wideband microwave generation using a low-energy-triggered bulk gallium arsenide avalanche semiconductor switch with ultrafast switching [J]. IEEE Transactions on Electron Devices, 2018, 65(4): 1308-1313.

CULPEPPER J, MILLER A, NEUBER A, et al. Packaging and evaluation of 100 kV photoconductive switches [C]∥ IEEE International Pulsed Power Conference. Piscataway, NJ, USA: IEEE, 2019: 9009753.

SUN Yue, HU Long, DANG Xin, et al. Investigation on the mechanism of triggering efficiency of high-power avalanche GaAs photoconductive semiconductor switch [J]. IEEE Electron Device Letters, 2021, 42(11): 1646-1649.

MA Cheng, YANG Lei, WANG Shaoqiang, et al. Study of the lifetime of high-power GaAs PCSSs under different energy storage modes [J]. IEEE Transactions on Power Electronics, 2017, 32(6): 4644-4651.

LIU Ruijia, SHANG Annan, CHEN Changjiang, et al. Nanostructure enabled lower on-state resistance and longer lock-on time GaAs photoconductive semiconductor switches [J]. Optics Letters, 2021, 46(4): 825-828.

CHOWDHURY A R, NESS R, JOSHI R P. Assessing lock-on physics in semi-insulating GaAs and InP photoconductive switches triggered by subbandgap excitation [J]. IEEE Transactions on Electron Devices, 2018, 65(9): 3922-3929.

CHU Xu, XUN Tao, WANG Langning, et al. Breakdown behavior of GaAs PCSS with a backside-light-triggered coplanar electrode structure [J]. Electronics, 2021, 10(3): 357.

卫新发, 梁国松, 张育民, 等. 氧化铟锡与掺Fe半绝缘GaN的接触特性 [J]. 半导体技术, 2021, 46(6): 474-478.

WEI Xinfa, LIANG Guosong, ZHANG Yumin, et al. Contact characteristics of indium tin oxide with Fe doped semi-insulated GaN [J]. Semiconductor Technology, 2021, 46(6): 474-478.

LIU Kang, CUI Hongwang, ZHU Li, et al. Introduction of graphene to decrease barrier height and improve contact characteristics of metal/Si-GaAs interface [J]. IEEE Transactions on Electron Devices, 2020, 67(10): 4105-4111.

XU Ming, LIU Xiaofei, LI Mengxia, et al. Transient characteristics of interdigitated GaAs photoconductive semiconductor switch at 1-kHz excitation [J]. IEEE Electron Device Letters, 2019, 40(7): 1136-1138.

谌怡, 刘毅, 王卫, 等. 激光二极管触发GaAs光导开关导通特性 [J]. 高电压技术, 2019, 45(1): 310-315.

SHEN Yi, LIU Yi, WANG Wei, et al. On-state properties of GaAs photoconductive semiconductor switch triggered by laser diode [J]. High Voltage Engineering, 2019, 45(1): 310-315.

CHOWDHURY A R, NIKISHIN S, DICKENS J, et al. Numerical studies into the parameter space conducive to “lock-on” in a GaN photoconductive switch for high power applications [J]. IEEE Transactions on Dielectrics and Electrical Insulation, 2019, 26(2): 469-475.

LUAN Chongbiao, LI Boting, ZHAO Juan, et al. A new phenomenon in semi-insulating 4H-SiC photoconductive semiconductor switches [J]. IEEE Transactions on Electron Devices, 2018, 65(1): 172-175.

PIWOWARSKI K, PERKA B. Possibilities of replacing selected switches with photoconductive semiconductor switches [J]. Przeglad Elektrotechniczny, 2021, 97(4): 88-91.

0

浏览量

4

下载量

0

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

相关文章

一种考虑可靠性指标的最优潮流模型

重整加热炉模糊故障树分析研究

考虑损伤程度的设备运行可靠性研究

基于系统可靠性评估的机组检修规划模型

脉冲方波作用下印刷电路板互连系统的击穿特性

相关作者

王建学 2

王锡凡 2

2

丁晓莺 1

赵振辉 2

程光旭 1

王玉乔 1

陈雪峰 1

相关机构

西安交通大学电子与信息工程学院

西安交通大学电气工程学院

西安交通大学能源与动力工程学院

西安交通大学机械制造系统工程国家重点实验室

西安工业大学机电工程学院

⁰