小体积电压输出型ZnO惠斯通电桥式紫外探测单元

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小体积电压输出型ZnO惠斯通电桥式紫外探测单元

更新时间：2025-05-08

- 小体积电压输出型ZnO惠斯通电桥式紫外探测单元
- A ZnO Wheatstone Bridge Type UV Detection Unit with Small Volume and Voltage Output Capability
- 西安交通大学学报 2022年56卷第1期页码：184-192
- 作者机构：
  
  1. 西安交通大学微电子学院,西安,710049
  2. 西安交通大学微纳电子与系统集成重点实验室,西安,710049
- 作者简介：
- 基金信息：
  
  : 2021-05-06。作者简介: 郭小川(1995—),男,硕士生;彭文博(通信作者),男,副教授,博士生导师。基金项目: 陕西省重点研发计划重点资助项目(S2018-YF-ZDGY-0542)
- DOI：10.7652/xjtuxb202201021
  中图分类号： TN36
- 网络首发：2022-01-10，
  
  纸质出版：2022
- 稿件说明：
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郭小川, 彭文博, 蔡亚辉, 等. 小体积电压输出型ZnO惠斯通电桥式紫外探测单元[J]. 西安交通大学学报, 2022,56(1):184-192.

A ZnO Wheatstone Bridge Type UV Detection Unit with Small Volume and Voltage Output Capability[J]. 2022, 56(1): 184-192.
郭小川, 彭文博, 蔡亚辉, 等. 小体积电压输出型ZnO惠斯通电桥式紫外探测单元[J]. 西安交通大学学报, 2022,56(1):184-192. DOI： 10.7652/xjtuxb202201021.

A ZnO Wheatstone Bridge Type UV Detection Unit with Small Volume and Voltage Output Capability[J]. 2022, 56(1): 184-192. DOI： 10.7652/xjtuxb202201021.

摘要

针对传统ZnO紫外光探测器无法直接输出电压传感信号而难以与后端信号处理芯片集成的问题

提出并实现了一种小体积电压输出型ZnO惠斯通电桥式紫外探测单元。利用大功率射频磁控溅射SiO

2

钝化层时高能粒子轰击ZnO薄膜表面的方法增加了ZnO薄膜表面的氧空位缺陷浓度

使ZnO光电导器件桥臂的紫外光响应电流获得近2个数量级的显著提升; 在SiO

2

钝化层上通过射频磁控溅射ZnO作为紫外线遮光层可大大减少ZnO光电导器件桥臂的暗场漏电流。遮光后ZnO光电导器件桥臂的紫外光响应电流显著降低至原先的1/10; 所制备的ZnO电桥式紫外探测单元可将入射的紫外光信号直接转换为电压信号输出

且可对1 μW～6 mW跨3个数量级强度范围的紫外光进行响应

响应度最高达9 mV/μW

紫外光可见光对比度为143.8

且整个单元体积小于1 mm

3

。实验结果表明

该ZnO电桥式紫外探测单元具有高响应度、宽响应范围、高紫外光可见光抑制比、可直接输出电压传感信号、体积小等优点

可用于实现具有高集成度的ZnO紫外感算一体芯片。

Abstract

Aiming at the problem that traditional ZnO UV photodetectors are difficult to integrate with signal processing chips because photodetectors cannot output a voltage sensing signal directly

a ZnO Wheatstone bridge type UV detection unit with small volume and voltage output capability is proposed and realized. The concentration of oxygen vacancy defects on the surface of ZnO thin film can be dramatically increased through the high-energy ions impact during the high-power RF magnetron sputtering of SiO

2

passivation layer. As a result

the UV photoresponse current of the ZnO photoconductive device bridge arm is e

nhanced by about two orders of magnitude. Utilizing the RF magnetron sputtered ZnO on the SiO

2

passivation layer as the UV light shielding layer

the dark leakage current of the ZnO photoconductive device bridge arm can be significantly decreased. After depositing ZnO UV light-shielding layer

the ZnO photoconductive device bridge arm's UV photoresponse current dramatically decreases to one tenth of that before deposition. The as-fabricated ZnO Wheatstone bridge type UV detection unit can directly convert input UV light signal to voltage signal output

with a broad UV light power sensing range of over three orders of magnitude from 1 μW to 6 mW. The maximum responsivity of the detection unit can reach 9 mV/μW

with a UV-Vis block ratio as high as 143.8. Besides

the total volume of the detection unit is smaller than 1 mm

3

. These results indicate that

the proposed ZnO Wheatstone bridge type UV detection unit has the advantages of high responsivity

broad UV light power sensing range

high UV-Vis block ratio

voltage output capability and small volume

and has great potential to realize highly integrated ZnO UV sensing-calculating integrated circuit chip.

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references

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