1. 清华大学机械工程系,北京,100084
2. 中国工程物理研究院材料研究所,四川,绵阳,621700
网络首发:2019-04-10,
纸质出版:2019
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杨金川 1, 2, 张建富 1, 等. 薄壁平面件真空多孔吸具的力学特性与优化设计[J]. 西安交通大学学报, 2019,53(4):31-37.
Optimum Design and Mechanical Analysis for Flat Fixture of Thin-Walled Wafer Workpiece under Vacuum Adsorption in Ultra-Precision Machining[J]. 2019, 53(4): 31-37.
杨金川 1, 2, 张建富 1, 等. 薄壁平面件真空多孔吸具的力学特性与优化设计[J]. 西安交通大学学报, 2019,53(4):31-37. DOI: 10.7652/xjtuxb201904005.
Optimum Design and Mechanical Analysis for Flat Fixture of Thin-Walled Wafer Workpiece under Vacuum Adsorption in Ultra-Precision Machining[J]. 2019, 53(4): 31-37. DOI: 10.7652/xjtuxb201904005.
针对薄壁平面件刚性差、装夹易变形、装夹困难等问题
基于圆周简支平板变形理论
提出了薄壁平面件在切削状态下吸附力学特性的数学模型及其真空平面多孔吸具优化设计方法
分析了吸附装夹的吸具吸孔设计布局与真空度对薄壁平面件加工中的变形耦合影响规律。理论分析表明
加工确定尺寸薄壁件吸孔的数量越少
孔径越小
则所需真空度越大; 对于优化确定的吸孔设计布局
真空度越大则薄壁平面件装夹及切削过程变形越大。通过有限元仿真和6061铝合金薄壁平面件装夹试验
验证了多孔吸具优化设计的有效性。优化设计的有限元分析表明
工件静态装夹变形能够控制在纳米量级。吸具样件加工试验结果表明
采用优化后的吸具装夹
可使加工后的薄壁件平面度公差控制在500 nm以内。此设计方法可为薄壁类零部件的吸具设计与装夹提供参考。
For solving bad rigidity
easy distortion and clamping difficulty of thin-walled wafer workpiece
a mathematical model for clamping design of thin-walled wafer is established following the deformation theory of circular simply-supported plate
and an optimization design strategy of planar vacuum suction with holes is proposed. The coupling influence mechanism of design layout of absorbing holes and vacuum degree on fixture of wafer is defined. For thin-walled parts with definite size
the theoretical analysis shows that the fewer the suction holes
the smaller the aperture and the higher the vacuum degree. After determining design layout of holes
it is found that larger deformation is deduced as vacuum degree increases. By means of FE simulation optimization and taking a 6061 aluminum alloy wafer as an example
the effectiveness of the optimal design strategy is validated. FE simulation for new design indicates that static clamping deformation can be reduced to nanometer scale. Machining test shows that the flatness tolerance of thin-walled wafer workpiece is limited below 500 nm.
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