采用电荷平衡模数转换器的高精度CMOS温度传感器

陈阳; 张瑞智; 金锴; 焦子豪; 张鸿

doi:10.7652/xjtuxb201810017

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采用电荷平衡模数转换器的高精度CMOS温度传感器

更新时间：2025-07-09

- 采用电荷平衡模数转换器的高精度CMOS温度传感器
- A CMOS Temperature Sensor with High-Precision Using a Charge-Balance Analog-to-Digital Converter
- 西安交通大学学报 2018年52卷第10期页码：124-131
- 作者机构：
  
  西安交通大学微电子学院,西安,710049
- 作者简介：
- 基金信息：
  
  : 2018-03-20。作者简介: 陈阳(1996-),男,硕士生;张鸿(通信作者),男,副教授,博士生导师。基金项目: 国家自然科学基金资助项目(61474092)
- DOI：10.7652/xjtuxb201810017
  中图分类号： TN911.7
- 网络首发：2018-10-10，
  
  纸质出版：2018
- 稿件说明：
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陈阳, 张瑞智, 金锴, 等. 采用电荷平衡模数转换器的高精度CMOS温度传感器[J]. 西安交通大学学报, 2018,52(10):124-131.

A CMOS Temperature Sensor with High-Precision Using a Charge-Balance Analog-to-Digital Converter[J]. 2018, 52(10): 124-131.
陈阳, 张瑞智, 金锴, 等. 采用电荷平衡模数转换器的高精度CMOS温度传感器[J]. 西安交通大学学报, 2018,52(10):124-131. DOI： 10.7652/xjtuxb201810017.

A CMOS Temperature Sensor with High-Precision Using a Charge-Balance Analog-to-Digital Converter[J]. 2018, 52(10): 124-131. DOI： 10.7652/xjtuxb201810017.

摘要

针对传统CMOS温度传感器芯片精度低

功耗高和温度范围窄的问题

提出了一种采用电荷平衡模数转换器(ADC)的高精度CMOS温度传感器。为了避免使用高精度带隙基准源

传感器中基于寄生双极晶体管的温度感知电路分别产生与温度成正比和反比的两个电压

再用一个电荷平衡ADC对这两个电压交替量化

得到与实时温度对应的数字量; 工艺波动引起的感知误差采用一个外置基准电压来校准; 整个温度传感器电路采用0.18 μm CMOS工艺设计。仿真结果表明:在-40～125 ℃的温度范围内

传感器的测量精度可达±0.2 ℃

完成一次测量的时间仅为42 ms

工作电流为130 μA

芯片版图面积为0.55 mm

。该温度传感器可应用在植入式医疗、射频标签和物联网等系统中实现对温度的高精度测量。

Abstract

A CMOS temperature sensor with high precision using a charge-balance analog-to-digital converter(ADC)is presented to solve the problems of low accuracy

high power consumption and narrow measuring range of conventional CMOS temperature sensor chips. The temperature sensing circuit based on parasitic bipolar junction transistors generates a voltage proportional to absolute temperature and a voltage inversely proportional to absolute temperature to avoid high-precision bandgap voltage reference

and then a charge-balanced ADC is used to alternatively quantify these two voltages and to obtain the 15 bit digital result corresponding to the real-time temperature. Sensing errors due to process variation are calibrated with an external reference volta

ge. A temperature sensing circuit is designed in a 0.18 μm CMOS process and is used for simulation. Results show that the measuring accuracy is ±0.2 ℃ in a temperature range from -40 ℃ to 125 ℃

while the duration for one measuring cycle is 42 ms

the operating current is only 130 μA

and the layout area of the core circuit is only 0.55 mm

. The proposed temperature sensor can be applied in the systems that require temperature sensor chips with high accuracy

low power consumption and wide measuring range

such as implantable medical devices

radio frequency identification tags and the Internet of Things.

关键词

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references

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