西安交通大学物理电子物理与器件教育部重点实验室,西安,710049
网络首发:2017-11-10,
纸质出版:2017
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魏强, 吴胜利, 付马龙, 等. 电子轰击下MgO薄膜的二次电子效应的衰减机理[J]. 西安交通大学学报, 2017,51(11):125-129.
Attenuation Mechanism of Secondary Electron Effect of MgO Film Under Electron Bombardment[J]. 2017, 51(11): 125-129.
魏强, 吴胜利, 付马龙, 等. 电子轰击下MgO薄膜的二次电子效应的衰减机理[J]. 西安交通大学学报, 2017,51(11):125-129. DOI: 10.7652/xjtuxb201711017.
Attenuation Mechanism of Secondary Electron Effect of MgO Film Under Electron Bombardment[J]. 2017, 51(11): 125-129. DOI: 10.7652/xjtuxb201711017.
以MgO薄膜、MgO/Au复合薄膜作为二次电子发射材料的研究对象
利用持续电子束轰击薄膜的方式
研究了二次电子效应与时间的变化规律。通过测试样品时间的指数衰减
电导率和介电常数对衰减速率的影响
建立模型假设来研究二次电子发射的机理
提出了潜在电子的概念及平板电容模型; 以此模型为基础进行分析推导
建立了二次电子发射过程理论模型
得出了诱导电流和二次电子发射系数实验值的表达式
与实际样品测试结果的趋势一致
二次电子发射材料性能的衰减速率与薄膜电导率正相关
验证了所提理论模型能很好地解释介质薄膜二次电子发射的衰减机理
有助于提高二次电子发射材料的衰减性能
为改进工艺和研发新型介质薄膜材料提供了一定的理论指导。
To improve the secondary electron emission coefficient and attenuation characteristic becomes the key to the application technology. Taking MgO film and MgO/Au composite films as the research objects of secondary electron emission materials
the change law of secondary electron effect over time is revealed by continuous electron beam bombardment on the film. The exponential decay of the sample time was tested and the influence of conductivity and dielectric constant on attenuation rate was explored. The mechanism of secondary electron emission was discussed under model hypothesis. The concept of potential electron and tablet capacitance model were put forward
and the theory model of the secondary electron emission process was then established. The expression of experimental value of the induced current and the secondary electron emission coefficient was obtained and coincided with the test result trend of actual sample
namely
the attenuation rate of secondary electron emission material properties was positively correlated to the film conductivity. It is concluded that the proposed theoretical model effectively explains the attenuation mechanism of the dielectric film secondary electron emission
and facilitates improving the attenuation performance of secondary electron emission material.
BELHAJ M, TONDU T, INGUIMBERT V. 材料分析方法 [M]. 北京: 机械工业出版社, 2004: 216.[本刊相关文献链接]毕成,唐桂华,傅博.纳米多孔结构单晶硅热电薄膜声子热导率数值研究.2017,51(5):23-30.[doi:10.7652/xjtuxb201705 004]封国宝,崔万照,李军,等.采用收拢式表面的二次电子发射抑制策略.2017,51(4):128-134.[doi:10.7652/xjtuxb201704 020]巫玮珊,梁小平,王科翔,等.离子储存电极薄膜性能的影响.2016,50(5):140-145.[doi:10.7652/xjtuxb201605021]李远洁,江凯,刘子龙.低温增强型非晶铟镓锌氧薄膜晶体管特性研究.2015,49(12):1-5.[doi:10.7652/xjtuxb201512 001]虞阳烨,曹猛,张海波.金属二次电子发射能谱的表面吸附势垒模型.2015,49(10):97-102.[doi:10.7652/xjtuxb201510 016]马利娥,梅雪松,李彦锋,等.薄膜传输系统导向辊的力学特性分析.2014,48(11):86-91.[doi:10.7652/xjtuxb201411 015]张振军,郑晓泉,吴文斌,等.不同温度下聚酰亚胺真空直流沿面闪络特性.2014,48(4):47-51.[doi:10.7652/xjtuxb 201404009]张振军,苗军,王学强,等.改性聚酰亚胺的真空直流沿面闪络特性.2013,47(4):51-56.[doi:10.7652/xjtuxb201304010]
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