0.5 μm栅长HfO<sub>2</sub>栅介质的GaN金属氧化物半导体高电子迁移率晶体管

韩克锋; 王创国; 朱琳; 孔月婵

doi:10.7652/xjtuxb201708012

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0.5 μm栅长HfO₂栅介质的GaN金属氧化物半导体高电子迁移率晶体管

更新时间：2025-07-09

- 0.5 μm栅长HfO₂栅介质的GaN金属氧化物半导体高电子迁移率晶体管
- A High Electron Mobility Transistor of GaN Metal Oxide Semiconductor with 0.5 μm Gate Length Employing HfO₂ as Gate Dielectric
- 西安交通大学学报 2017年51卷第8期页码：72-76
- 作者机构：
  
  中国电子科技集团公司第五十五研究所,南京,210016
- 作者简介：
- 基金信息：
  
  : 2016-11-14。作者简介: 韩克锋(1989—),男,硕士,工程师。基金项目: 国家自然科学基金资助项
- DOI：10.7652/xjtuxb201708012
  中图分类号： TN305.2;TN325+.3
- 网络首发：2017-08-10，
  
  纸质出版：2017
- 稿件说明：
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韩克锋, 王创国, 朱琳, 等. 0.5 μm栅长HfO₂栅介质的GaN金属氧化物半导体高电子迁移率晶体管[J]. 西安交通大学学报, 2017,51(8):72-76. DOI: 10.7652/xjtuxb201708012.

A High Electron Mobility Transistor of GaN Metal Oxide Semiconductor with 0.5 μm Gate Length Employing HfO₂ as Gate Dielectric[J]. 2017, 51(8): 72-76. DOI: 10.7652/xjtuxb201708012.
韩克锋, 王创国, 朱琳, 等. 0.5 μm栅长HfO₂栅介质的GaN金属氧化物半导体高电子迁移率晶体管[J]. 西安交通大学学报, 2017,51(8):72-76. DOI: 10.7652/xjtuxb201708012. DOI：

A High Electron Mobility Transistor of GaN Metal Oxide Semiconductor with 0.5 μm Gate Length Employing HfO₂ as Gate Dielectric[J]. 2017, 51(8): 72-76. DOI: 10.7652/xjtuxb201708012. DOI：

摘要

为了抑制GaN高电子迁移率晶体管(HEMT)的栅极漏电

提出了一种0.5 μm栅长的GaN金属氧化物半导体(MOS)高电子迁移率晶体管结构。该结构采用势垒层部分挖槽

并用高介电常数绝缘栅介质的金属氧化物半导体栅结构替代传统GaN HEMT中的肖特基栅。基于此结构制备出一种GaN MOSHEMT器件

势垒层总厚度为20 nm

挖槽深度为15 nm

栅介质采用高介电常数的HfO

器件栅长为0.5 μm。对器件电流电压特性和射频特性的测试结果表明:所制备的GaN MOSHEMT器件最大电流线密度达到0.9 A/mm

开态源漏击穿电压达到75 V; 与GaN HEMT器件相比

其栅极电流被大大压制

正向栅压摆幅可提高10倍以上

并达到与同栅长GaN HEMT相当的射频特性。

Abstract

A high electron mobility transistor of GaN metal oxide semiconductor with 0.5 μm gate length(MOSHEMT)is proposed to suppress the gate leakage of GaN high electron mobility transistor(HEMT). A partially etched barrier structure is employed

and the structure of metal-oxide-semiconductor(MOS)gate with a high dielectric constant dielectric is used to replace the traditional GaN-HEMT Schottky gate. A GaN MOSHEMT is fabricated based on the proposed structure. The total thickness of the barrier layer is 20 nm

and the depth of the barrier trench is 15 nm. The gate dielectric uses the HfO

with high dielectric constant

and the gate length is 0.5 μm. Tests of current-v

oltage characteristic and radio frequency characteristic of the proposed device show that the maximum current density of the device is 900 A/mm

and the source-drain breakdown voltage is 75 V. A comparison with traditional GaN HEMTs shows that the GaN MOSHEMT greatly suppresses the gate current

its forward gate swing voltage is about ten times higher

and its radio frequency characteristic is comparable to that of the traditional GaN HEMTs with same gate length.

关键词

Keywords

references

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0.5 μm栅长HfO2栅介质的GaN金属氧化物半导体高电子迁移率晶体管

A High Electron Mobility Transistor of GaN Metal Oxide Semiconductor with 0.5 μm Gate Length Employing HfO2 as Gate Dielectric

DOI：10.7652/xjtuxb201708012

摘要

Abstract

关键词

Keywords

references

0.5 μm栅长HfO₂栅介质的GaN金属氧化物半导体高电子迁移率晶体管

A High Electron Mobility Transistor of GaN Metal Oxide Semiconductor with 0.5 μm Gate Length Employing HfO₂ as Gate Dielectric