一种新型GaAs基无漏结隧穿场效应晶体管

骆东旭 1; 李尊朝 2; 关云鹤 2; 张也非 2; 孟庆之 2

doi:10.7652/xjtuxb201602012

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一种新型GaAs基无漏结隧穿场效应晶体管

更新时间：2025-07-09

- 一种新型GaAs基无漏结隧穿场效应晶体管
- A Novel GaAs-Based Tunnel Field-Effect Transistor Without Drain Junction
- 西安交通大学学报 2016年50卷第2期页码：68-72+123
- 作者机构：
  
  西安交通大学软件学院,西安,710049
- 作者简介：
- 基金信息：
  
  : 2015-09-06。作者简介: 骆东旭(1990—),男,硕士生;李尊朝(通信作者),男,教授,博士生导师。基金项目: 国家自然科学基金资助项目(611760380)
- DOI：10.7652/xjtuxb201602012
  中图分类号： TN386.6
- 网络首发：2016-02-10，
  
  纸质出版：2016
- 稿件说明：
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骆东旭 1, 李尊朝 2, 关云鹤 2, 等. 一种新型GaAs基无漏结隧穿场效应晶体管[J]. 西安交通大学学报, 2016,50(2):68-72+123.

A Novel GaAs-Based Tunnel Field-Effect Transistor Without Drain Junction[J]. 2016, 50(2): 68-72+123.
骆东旭 1, 李尊朝 2, 关云鹤 2, 等. 一种新型GaAs基无漏结隧穿场效应晶体管[J]. 西安交通大学学报, 2016,50(2):68-72+123. DOI： 10.7652/xjtuxb201602012.

A Novel GaAs-Based Tunnel Field-Effect Transistor Without Drain Junction[J]. 2016, 50(2): 68-72+123. DOI： 10.7652/xjtuxb201602012.

摘要

针对隧穿场效应晶体管开态电流较低的问题

提出了一种新型GaAs基无漏结隧穿场效应晶体管结构

并对其性能进行了研究。在该结构中

沟道和漏区采用具有相同掺杂浓度的N型InGaAs材料

实现沟道/漏区无结化

简化了制造工艺; 同时为了提高开态隧穿电流

源区采用不同于沟道的P型GaAsSb材料

实现异质源区/沟道结构。该结构能有效增大关态隧穿势垒宽度

降低泄漏电流

同时增加开态带带隧穿概率

提升开态电流

从而获得低亚阈值斜率和高开关比。仿真结果表明

在0.4 V工作电压下

该新型GaAs基无漏结隧穿场效应晶体管的开态电流为3.66 mA

关态电流为4.35×10

-13

开关电流比高达10

平均亚阈值斜率为27 mV/dec

漏致势垒降低效应值为126。

Abstract

A novel GaAs-based tunnel field-effect transistor without drain junction is proposed to improve the on-state current and its performance is investigated. The transistor uses N-type InGaAs with the same doping concentration in the channel and drain to form junctionless channel/drain and to simplify the manufacture process

while P-type GaAsSb is used in the source to produce hetero junction source/channel and to increase the on-state current. The widened tunnel barrier in the off-state decreases the leakage current

and the promoted band-to-band tunneling probability in the on-state increases the driving current

so that both the low subthreshold slope and the high ratio between on-state current and off-state current are obtained. Numerical simulations show that the nov

el device achieves an on-state current of 3.66×10

-3

and an off-state current of 4.35×10

-13

A under 0.4 V voltage

and the ratio between on-state current and off-state current is 10

and that an average subthreshold slope of 27 mV/dec and a DIBL of 126 are obtained.

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references

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