铜尖表面石墨烯原位生长工艺及其场发射特性

田康; 刘卫华; 李昕; 魏仙琪; 王小力

doi:10.7652/xjtuxb201508002

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铜尖表面石墨烯原位生长工艺及其场发射特性

更新时间：2025-07-09

- 铜尖表面石墨烯原位生长工艺及其场发射特性
- In-Situ Growth of Graphene on a Copper Tip and Its Field Emission Property
- 西安交通大学学报 2015年49卷第8期页码：6-10
- 作者机构：
  
  西安交通大学电子与信息工程学院,西安,710071
- 作者简介：
- 基金信息：
  
  : 2015-01-01。作者简介: 田康(1990—),男,硕士生;刘卫华(通信作者),男,副教授。基金项目: 国家自然科学基金资助项目(61172040,91123018,61172041)
- DOI：10.7652/xjtuxb201508002
  中图分类号： TN304.9
- 网络首发：2015-08-10，
  
  纸质出版：2015
- 稿件说明：
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田康, 刘卫华, 李昕, 等. 铜尖表面石墨烯原位生长工艺及其场发射特性[J]. 西安交通大学学报, 2015,49(8):6-10.

In-Situ Growth of Graphene on a Copper Tip and Its Field Emission Property[J]. 2015, 49(8): 6-10.
田康, 刘卫华, 李昕, 等. 铜尖表面石墨烯原位生长工艺及其场发射特性[J]. 西安交通大学学报, 2015,49(8):6-10. DOI： 10.7652/xjtuxb201508002.

In-Situ Growth of Graphene on a Copper Tip and Its Field Emission Property[J]. 2015, 49(8): 6-10. DOI： 10.7652/xjtuxb201508002.

摘要

针对非高熔点金属针尖在场发射中表面原子易升华的问题

通过在亚微米量级的铜尖表面原位生长石墨烯来抑制铜原子升华

以提高其场发射稳定性能。首先利用三氯化铁溶液将铜丝进行腐蚀

得到亚微米量级别的高曲率铜尖

然后通过化学气相沉积法在高曲率的铜尖表面原位生长获得了石墨烯

得到了一种新的冷阴极结构——铜尖/石墨烯结构。对覆盖石墨烯前后的铜尖进行场发射测试

结果发现

石墨烯的存在使铜尖的开启场强从4 V/μm降低到2.5 V/μm

并且提高了发射电流的稳定性。该研究结果对于在亚微米尺度铜表面生长石墨烯以及利用石墨烯改善金属针尖的场发射特性均有参考价值

为非高熔点金属制作场发射尖端提供了一种可能性。

Abstract

Metal tips with low melting point suffer from sublimation during field emission. A layer of graphene in-situ on a submicron copper tip is synthesized to suppress the sublimation and to improve the field emission stability. A copper wire is etched in ferric trichloride solution to get a copper tip with submicron radius. Then a graphene layer is successfully synthesized on the copper tip by chemical vapor deposition. The copper tip is tested pre and after graphene growth. The field emission tests show that after the graphene growth

the turn-on field of the copper tip reduces from 4 V/μm to 2.5 V/μm while the current stability is improved. The results reported here is valuable for both the growth of graphene on a copper surface of sub-micron area and the improvement of field emission of graphene decorated metal tips.

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references

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