高温功率循环下绝缘栅双极型晶体管失效特征及机理分析

陈明

doi:10.7652/xjtuxb201404021

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高温功率循环下绝缘栅双极型晶体管失效特征及机理分析

更新时间：2025-04-29

- 高温功率循环下绝缘栅双极型晶体管失效特征及机理分析
- Failure Characteristics and Mechanism Analysis of IGBT Modules under High-Temperature Power Cycling
- 西安交通大学学报 2014年48卷第4期页码：119-126
- 作者机构：
  
  海军驻广州四二七厂军事代表室,广州,510715
- 作者简介：
  
  : 2013-08-26。作者简介: 陈明(1982—),男,博士,工程师。基金项目: 国家自然科学基金重点资助项目(50737004)
- 基金信息：
  
  : 2013-08-26。作者简介: 陈明(1982—),男,博士,工程师。基金项目: 国家自然科学基金重点资助项目(50737004)
- DOI：10.7652/xjtuxb201404021
  中图分类号： TN32
- 网络首发：2014-04-10，
  
  纸质出版：2014
- 稿件说明：
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陈明. 高温功率循环下绝缘栅双极型晶体管失效特征及机理分析[J]. 西安交通大学学报, 2014,48(4):119-126.

CHEN Ming. Failure Characteristics and Mechanism Analysis of IGBT Modules under High-Temperature Power Cycling[J]. 2014, 48(4): 119-126.
陈明. 高温功率循环下绝缘栅双极型晶体管失效特征及机理分析[J]. 西安交通大学学报, 2014,48(4):119-126. DOI： 10.7652/xjtuxb201404021.

CHEN Ming. Failure Characteristics and Mechanism Analysis of IGBT Modules under High-Temperature Power Cycling[J]. 2014, 48(4): 119-126. DOI： 10.7652/xjtuxb201404021.

摘要

结合绝缘栅双极型晶体管(IGBT)模块结构和工作的不同阶段

分析了IGBT失效类型及其失效机理。深入分析了影响IGBT工作寿命的3种封装失效类型及失效机理。高结温、大温度梯度极端工作方式下主要的封装失效类型是键合引线失效

由某一根或几根过载引起电流分配不均引发

失效前压降大

热阻基本不变。通过分析得到IGBT模块的寿命值近似服从Weibull分布。实验过程中结合各类显微镜和红外热像仪得出的失效特征分布规律表明:经过功率循环后的芯片表面中心区域、边缘绝缘保护环原胞结构均由规则点阵变化为点阵中出现小的黑圈、空穴、裂纹

变得不再规则; 各物理层接触面间的缺陷由芯片向下呈递减趋势; IGBT模块各物理层不平整度由基板向上呈递减趋势。通过实际实验发现

可将压降的突变位置作为IGBT可靠性评估的标准。

Abstract

Failure types and mechanism of IGBT modules according to the module structure and different operation stages are analyzed

and three types of package failure mechanism affecting the lifetime of IGBT are discussed. The package failure types and modes are concerned with the lift-off and meltdown of bonded-wires

solder fatigue

and reconstruction of metallization. The failures of bonded-wires are generally caused by a great change in junction temperature and high temperature gradient. The detection and inspection of the failure process of bonded-wires

the structure of chip surface

and the delamination and cracks and voids in solder layers by means of the instruments demonstrate that the main failure mode of high junction temperature and temper

ature gradient is the lift-off and meltdown of bonded-wires. The overload of one or more bonded-wires leads to an unbalanced distribution of the current. When V

gradually becomes big

then a sharp jump happens before failure

the junction-case thermal resistance remains steady

and the value of IGBT lifetime is approximate to that of Weibull distribution. By investigating various microscopes and infrared thermal imaging

the failure characteristics are obtained. Failure characteristic distribution show that after power cycle

the central area of the chip surface

insulating protective ring of the original cell structure become no longer symmetry with small black circles

holes

and cracks. The defects of the contact physical layer decrease downwardly. From baseplate to chip surface

IGBT module flatness of the physical layer exhibits a decreasing trend. The sharp jump position of V

can be considered as the IGBT reliability evaluation standard.

关键词

Keywords

references

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OUKAOUR A, TALA-IGHIL B, POUDEROUS B, et al. Ageing defect detection on IGBT power modules by artificial training methods based on pattern recognition[J]. Microelectronics Reliability, 2011, 51(1): 386-391.

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陈明, 胡安, 刘宾礼. 绝缘栅双极型晶体管失效机理与寿命预测模型分析[J]. 西安交通大学学报, 2011, 45(10): 65-71.

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