1. 钢铁研究总院先进钢铁流程及材料国家重点实验室,北京,100081
2. 钢铁研究总院连铸技术国家工程研究中心,北京,100081
网络首发:2013-11-10,
纸质出版:2013
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樊立峰 1, 凌晨 1, 付兵 1, 等. 低温普通取向硅钢高温退火过程中高斯晶粒的演变[J]. 西安交通大学学报, 2013,47(11):81-86.
Evolution of Goss Texture in Annealing Process at High Temperature of CGO Silicon Steel with Slab Reheating at Low Temperature[J]. 2013, 47(11): 81-86.
樊立峰 1, 凌晨 1, 付兵 1, 等. 低温普通取向硅钢高温退火过程中高斯晶粒的演变[J]. 西安交通大学学报, 2013,47(11):81-86. DOI: 10.7652/xjtuxb201311015.
Evolution of Goss Texture in Annealing Process at High Temperature of CGO Silicon Steel with Slab Reheating at Low Temperature[J]. 2013, 47(11): 81-86. DOI: 10.7652/xjtuxb201311015.
对低温加热工艺生产的普通取向(common grain-oriented
CGO)硅钢的高温退火过程进行了中断实验
材料为含3.0% Si、0.5% Cu、0.009 8% S(均为质量分数)的以Cu
2
S为主抑制剂的普通取向CGO钢。原始板坯厚度为230 mm
于1 200 ℃均热后经4道次粗轧、7道次精轧至2.3 mm; 热轧板采用两次冷轧法轧至0.3 mm
中间完全脱碳退火
最后于1 200 ℃高温退火。最后样品的磁性能:铁损P
17/50
为1.182 W/kg
磁感应强度B
8
为1.897 T。借助配有EDAX OIM电子背散射衍射(EBSD)系统的ZEISS SUPRA 55VP扫描电子显微镜
对高温退火过程中高斯晶粒的演变进行了研究
结果表明:升温过程中晶粒尺寸增长缓慢
650 ℃时取向分布函数(ODF)图出现高斯织构组分
但强度很弱
高斯晶粒偏离角小于9°; 950 ℃时高斯晶粒平均生长速度超过其他晶粒; 950~1 000 ℃时高斯晶粒异常长大
偏离角降至约3°; 在950 ℃之前高斯取向晶粒相比于其他晶粒没有尺寸优势。
The high-temperature annealing process of common grain-oriented(CGO)silicon steel was investigated by interrupting test. The samples were rolled from CGO silicon steel slab under low reheating temperature. The CGO silicon steel
taking Cu
2
S as the main inhibitor
contains 3.0%Si
0.5%Cu
and 0.0098%S. The original casting slab is 230 mm in thickness. After 1 200 ℃ reheating
four-pass rough rolling and seven-pass finish rolling were conducted to make the thickness of the slab get to 2.3 mm. Then the hot rolled plate was cold-rolled twice to 0.3 mm wit
h intermediate decarburizing annealing and final 1 200 ℃ annealing. The final iron loss P
17/50
is 1.182 W/kg
and magnetic remanence B
8
reaches 1.897 T. The evolution of Goss texture in the high-temperature annealing process was analyzed by ZEISS SUPRA 55VP SEM with EBSD system. The results show that: Grains grow up slowly with the increase in temperature; Goss texture appears in ODF of the sample annealed at 650 ℃
its intensity is very weak and the deviation angles of Goss grains are smaller than 9°; The average growth rate of Goss grains is higher than that of other grains at 950 ℃; Goss grains grow abnormally within 950~1 000 ℃
and the deviation angles decrease to about 3°; Goss grains have no size advantage before abnormal growth.
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