西安工业学院材料与化工学院,西安,710032
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纸质出版:2006
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于灵敏, 祁立军, 范新会, 等. 物理热蒸发法制备CdS/ SiO2 纳米线阵列和CdS 纳米带
[J]. 西安交通大学学报, 2006,40(1):75-0078. DOI: 10.7652/xjtuxb200601018.
CdS/ SiO2 Nanowire Arrays and CdS Nanobelts Synthesi-ed by Thermal Evaporation
[J]. 2006, 40(1): 75-0078. DOI: 10.7652/xjtuxb200601018.
利用物理热蒸发法蒸发CdS 和CdO 的混合粉末
Si 衬底表面发生了选择性刻蚀
并由此制<br />备出CdS/ SiO2 纳米线阵列和CdS 纳米带. 研究了CdS/ SiO2 纳米线阵列的形成原因和CdS 纳米带<br />的生长过程
结果表明: CdS 枝晶的生长对CdS/ SiO2 纳米线阵列的形成起到了非常重要的作<br />用;CdS/ SiO2纳米线阵列的形成符合“纳米电化学自组织机制”;CdS 纳米带的生长过程为气O固过<br />程.<br />
CdS/ SiO2 nanowire arrays and CdS nanobelt s were synt hesi-ed by t hermal evaporation<br />of CdS and CdO mixt ure powders
and highly selective etching occurred on the surfaces of silicon<br />subst rate. The growth mechanism of CdS/ SiO2 nanowire arrays and t he growt h process of CdS<br />nanobelt s were st udied. The result s show t hat the growt h of CdS dendrites plays an important<br />role in t he formation of CdS/ SiO2 nanowire arrays ; t he formation of CdS/ SiO2 nanowire arrays<br />complies wit h t he self2assembling nanoelect rochemist ry mechanism ; and t he growth of CdS nano2<br />belt s relies on a vapor2solid t ransformation.<br />
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