复旦大学材料科学系,上海,200433
网络首发:2008-11-10,
纸质出版:2008
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吴子景 1, 吴晓京 1, SHEN Wei-dian 2, 等. 集成电路钝化层薄膜的纳米力学性质研究[J]. 西安交通大学学报, 2008,42(11):1345-1349.
Nanomechanical Properties of Passivation Thin Films in Integrated Circuit[J]. 2008, 42(11): 1345-1349.
利用等离子体增强化学气相淀积工艺在p型单晶硅(111)衬底上制备了厚度为70、150、450 nm的SiO
2
薄膜和100、170、220 nm的Si
3
N
4
薄膜
并使用纳米压入仪对薄膜进行了纳米力学测试与分析.薄膜在不同载荷下的硬度和弹性模量计算采用Oliver-Pharr方法.在测量两种薄膜的硬度时没有发现压痕尺寸效应.SiO
2
薄膜的弹性模量与压入深度的依赖关系不明显
但与薄膜厚度的依赖关系较明显
薄膜厚度的增加将导致弹性模量显著减小
而Si
3
N
4
的弹性模量与薄膜厚度的依赖关系不明显
但与压入深度的依赖关系较明显
会随着压入深度的增加而逐渐增加到某一定值.
In the experiment herein
both SiO
2
thin films and Si
3
N
4
thin films were deposited by plasma enhanced chemical vapor deposition(PECVD)on p-type silicon(111)substrate. The film thickness got to 70
150
450 nm for SiO
2
and 100
170
220 nm for Si
3
N
4
respectively. A nanohardness tester was then used to conduct nanomechanical characterization on those SiO
2
and Si
3
N
4
thin films. Oliver-Pharr method was adopted in the calculation of hardness and elastic modulus of those thin films under varied loads. Hardness of SiO
2
and Si
3
N
4
films shows no indentation size effect. Elastic modulus of SiO
2
films does not vary much
with indentation depth
but shows film thickness dependence
decreasing with the increase in film thickness. Elastic modulus of Si
3
N
4
films depends less on film thickness
but more on indentation depth
increasing to a constant value with the increase in indentation depth.
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于映, 吴清鑫, 罗仲梓. 氮化硅薄膜力学性能的研究及其在射频MEMS开关中的应用 [J]. 传感技术学报, 2006, 19(5): 1967-1969.
YU Ying, WU Qingxin, LUO Zhongzi. Study on mechanical property of silicon nitride thin film and the application in RE MEMS switches [J]. Chinese Journal of Sensors and Actuators, 2006, 19(5): 1967-1969.
BECK U, SMITH D T, REINERS G, et al. Mechanical properties of SiO2 and Si3N4 coatings: a BAM/NIST co-operative project [J]. Thin Solid Films, 1998, 332(1/2): 164-171.
OLIVER W C, PHARR G M. An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments [J]. Journal of Materials Research, 1992, 7(6): 1564-1583.
IRENE E A. Ultra-thin SiO2 film studies: index, thickness, roughness and the initial oxidation regime [J]. Solid-State Electronics, 2001, 45(8): 1207-1217.
FERNANDEZ-LIMA F, RODRIGUEZ J A, PEDRERO E, et al. Ion beam analysis of PECVD silicon oxide thin films [J]. Nuclear Instruments and Methods in Physics Research, B: Beam Interactions with Materials and Atoms, 2006, 243(1): 200-204.
NIX W D, GAO Huajian. Indentation size effects in crystalline materials: a law for strain gradient plasticity [J] Journal of the Mechanics and Physics of Solids, 1998, 46(3): 411-425.
张泰华. 影响纳米压入测试结果的因素 [J]. 实验力学, 2004, 19(4): 437-442.
ZHANG Taihua. Factors influencing nanoindentation test data [J]. Experimental Mechanics, 2004, 19(4): 437-442.
CAO Zhiqiang, ZHANG Xin. Nanoindentation creep of plasma-enhanced chemical vapor deposited silicon oxide thin films [J]. Scripta Materialia, 2007, 56(3): 249-252.
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