Silicon-on-insulator(SOI)inverted-cup high-temperature piezoresistive pressure sensitive chip with high accuracy and sensitivity was developed by micro electro-mechanical system(MEMS )technology. It was bonded on glass ring with electrostatic bonding technology and the glass ring was packaged on the flush-type mechanical structure with glass slurry sintering process or high temperature adhesive technology. The channelling effect was avoided due to the flush-type mechanical structure and the packaging technique

so the inverted-cup high-temperature and high-frequency piezoresistive pressure sensor was fabricated basically. The effect of installation pre-tightening force on the sensor properties was analyzed with finite element method(FEM)and the experiments. The static and dynamic experiment results show that the accuracy of the sensor gets ±0.114% FS and the dynamic response frequency 694.4 kHz

which develops the sensor to meet the measurement requirements of high-temperature and high-frequency dynamic pressure in the fields like explosive blasting test.