铜化学机械抛光材料去除机理的准连续介质法研究

朱爱斌 1; 2; 路新春 1; 张浩 2; 陈渭 2; 谢友柏 2

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铜化学机械抛光材料去除机理的准连续介质法研究

更新时间：2025-07-09

- 铜化学机械抛光材料去除机理的准连续介质法研究
- Investigation for Material Removal Mechanism in Copper Chemical Mechanical Polishing with Quasi-Continuum Method
- 西安交通大学学报 2011年45卷第12期页码：111-116
- 作者机构：
  
  1. 清华大学摩擦学国家重点实验室,北京,10084
  2. 西安交通大学现代设计及转子轴承系统教育部重点实验室,西安,710049
- 作者简介：
- 基金信息：
  
  : 2011-06-16. 作者简介: 朱爱斌(1975-),男,博士生;路新春(通信作者),男,教授. 基金项目: 国家杰出青年科学基金资助项目(50825501);国家自然科学基金创新研究群体科学基金资助项目(51021064);国家科技重大专项资助项目(2008ZX02104-001)
- DOI：
  中图分类号： TH117.3
- 网络首发：2011-12-10，
  
  纸质出版：2011
- 稿件说明：
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朱爱斌 1, 2, 路新春 1, 等. 铜化学机械抛光材料去除机理的准连续介质法研究[J]. 西安交通大学学报, 2011,45(12):111-116.

Investigation for Material Removal Mechanism in Copper Chemical Mechanical Polishing with Quasi-Continuum Method[J]. 2011, 45(12): 111-116.
朱爱斌 1, 2, 路新春 1, 等. 铜化学机械抛光材料去除机理的准连续介质法研究[J]. 西安交通大学学报, 2011,45(12):111-116. DOI：

Investigation for Material Removal Mechanism in Copper Chemical Mechanical Polishing with Quasi-Continuum Method[J]. 2011, 45(12): 111-116. DOI：

摘要

采用准连续介质力学方法研究了铜化学机械抛光过程的机械作用材料去除机理.模拟了不同大小磨粒在单晶铜工件上的磨削过程

分析了切削过程中工件内部材料变形、切屑的形成以及工件内部应力分布和切削力变化.研究结果表明

工件内部材料沿着与切削方向约45°变形形成剪切带

在剪切带区域伴随有位错、滑移等现象产生.磨粒较小时加工后的表面质量较差

磨粒较大时加工质量较好

但会造成工件内部较大的塑性变形与更深的残余应力分布.磨粒尺寸变化对于切向切削力影响不大.

Abstract

Quasi-continuum method is adopted to investigate the material removal mechanism of chemical mechanical polishing of copper. The grinding process on the single crystal workpiece of abrasive particles of different sizes is simulated to analyze material deformation

stress distribution in the workpiece

chip formation and cutting force fluctuation. The result shows that shear zone is formed at 45° to the polishing direction with dislocations and sliding in the bulk. Smaller abrasive particles result in bad surface quality

while larger particles generate larger plastic deformation and deeper residual stress layer. Particle size exerts little influence on the tangential cutting force.

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references

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