直流磁控溅射氧化铟锡薄膜的低温等离子退火研究

商世广; 朱长纯

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直流磁控溅射氧化铟锡薄膜的低温等离子退火研究

专题研究 | 更新时间：2025-12-08

- 直流磁控溅射氧化铟锡薄膜的低温等离子退火研究
- Research on Low Temperature Plasma Annealing of Indium Tin Oxide Films Prepared by Direct Current Magnetron Sputtering
- 西安交通大学学报 2007年41卷第2期页码：236-240
- 作者机构：
  
  西安交通大学电子与信息工程学院,西安,710049
- 作者简介：
- 基金信息：
  
  : 2006-05-31. 作者简介: 商世广(1975～),男,博士生;朱长纯(联系人),男,教授,博士生导师. 基金项目: 国家自然科学基金资助项目(60036010, 60476037);国家高技术研究发展计划资助项目(2001AA313090)
- DOI：
  中图分类号： O484
- 网络首发：2007-02-10，
  
  纸质出版：2007
- 稿件说明：
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商世广, 朱长纯. 直流磁控溅射氧化铟锡薄膜的低温等离子退火研究[J]. 西安交通大学学报, 2007,41(2):236-240.

商世广, 朱长纯. Research on Low Temperature Plasma Annealing of Indium Tin Oxide Films Prepared by Direct Current Magnetron Sputtering[J]. 2007, 41(2): 236-240.
商世广, 朱长纯. 直流磁控溅射氧化铟锡薄膜的低温等离子退火研究[J]. 西安交通大学学报, 2007,41(2):236-240. DOI：

商世广, 朱长纯. Research on Low Temperature Plasma Annealing of Indium Tin Oxide Films Prepared by Direct Current Magnetron Sputtering[J]. 2007, 41(2): 236-240. DOI：

摘要

提出了一种可显著改善室温下直流磁控溅射氧化铟锡(ITO)薄膜晶体结构、光学和电学性能的后处理方法

将ITO薄膜分别置于氩气、氨气和氧气中进行低温等离子体退火处理.同单纯的退火处理相比

在3种气氛下

低温等离子退火均可使室温溅射沉积的ITO薄膜在相对低的温度(150 ℃)时

由非晶态转变为晶态

其相应的电学和光学性能都有较大的提高.实验证明:氨气气氛下退火温度为350 ℃时

玻璃衬底上ITO薄膜在波长为600 nm的可见光区内的透光率可达88.5%; 薄膜表面的针刺很少

表面平整度小于2.08 nm; 方块电阻由348.7 Ω降到66.8 Ω

相应的电阻率由4.1×10

-3

Ω·cm降到7.9×10

-4

Ω·cm.该方法更能满足柔性有机聚合衬底的ITO薄膜对低温退火的要求.

Abstract

A novel post-treatment method was presented to evidently improve the structural

electrical and optical properties of the indium tin oxide films prepared by direct current magnetron sputtering at room temperature

in which the indium tin oxide films were annealed in argon

ammonia and oxygen atmosphere with low temperature plasma separately. Compared to single annealing

the plasma in the three ambients would result in the crystallization of amorphous indium tin oxide films

and the improvement of the corresponding electrical and optical properties at comparative low temperature about 150 ℃. The experiment revealed that the best results were obtained in ammonia

and when the annealing te

mperature was at 350 ℃

the maximal transmittance reached 88.5%(at a wavelength of 600 nm

including the glass substrates). The surface morphology was very smooth with a root mean square(RMS)less than 2.08 nm. The change of square resistance was decreased from 348.7 Ω to 66.8 Ω

and the corresponding resistivity was decreased from 4.1×10

-3

Ω ·cm to 7.9×10

-4

Ω ·cm. For ITO films

this method can better satisfy low temperature annealing for the flexible polymer indium tin oxide film.

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Keywords

references

Liu C,Matsutani T, Asanuma T, et al. Room-temperature growth of crystalline indium tin oxide films on glass using low-energy oxygen-ion-beam assisted deposition [J]. Journal of Applied Physics, 2003, 93(4):2262-2266.

Xu Ying, Gao Jinsong, Zheng Xuanming, et al. Vacuum annealing effects on properties of ITO films prepared by reactive low voltage ion plating technique [J]. Proc of SPIE, 2005, 6024:602428.

Swint A L, Bohn P W. Effect of acidic and basic surface dipoles on the depletion layer of indium tin oxide as measured by in-plane conductance [J]. Applied Physics Letters, 2004, 84(1):61-62.

Choa J S, Koh S K. Deposition of indium tin oxide films on polycarbonate substrates by using ion beam processes[J]. Journal of Vacuum Science and Technology, 2003, 21(5):2060-2063.

Paine D C, Whitson T, Janiac D, et al. A study of low temperature crystallization of amorphous thin film indium-tin-oxide [J]. Journal of Vacuum Science and Technology, 1999, 85(12):8445-8450.

Hwang M S, Jeong H S, Kim W M, et al.Properties of Co-deposited indium tin oxide and zinc oxide films using a bipolar pulse power supply and a dual magnetron sputter source [J]. Journal of Vacuum Science and Technology, 2003, 21(4):1399-1402.

Rogozin A, Shevchenko N, Vinnichenko M, et al. Real-time evolution of the indium tin oxide film properties and structure during annealing in vacuum [J]. Journal of Applied Physics, 2004, 85(5):212-215.

Takayama S, Sugawara T, Tanaka A, et al. Indium tin oxide films with low resistivity and low internal stress [J]. Journal of Vacuum Science and Technology, 2003,21(4):1351-1354.

Houng B. Tin doped indium oxide transparent conducting thin films containing silver nanoparticles by sol-gel technique [J]. Applied Physics Letters, 2005, 87(25):251922.

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