ZnIn<sub>2</sub>S<sub>4</sub>薄膜喷雾热分解制备及其光电化学性质

李明涛; 苏进展; 周朝晖; 郭烈锦

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ZnIn₂S₄薄膜喷雾热分解制备及其光电化学性质

氢能研究 | 更新时间：2025-12-08

- ZnIn₂S₄薄膜喷雾热分解制备及其光电化学性质
- Preparation of ZnIn₂S₄ Thin Film by Spray Pyrolysis and Its Photoelectrochemical Characteristic
- 西安交通大学学报 2008年42卷第1期页码：106-109
- 作者机构：
  
  西安交通大学动力工程多相流国家重点实验室,西安,710049
- 作者简介：
- 基金信息：
  
  : 2007-07-15. 作者简介: 李明涛(1981-),男,博士生;郭烈锦(联系人),男,教授,博士生导师. 基金项目: 国家重点基础研究发展规划资助项目(2003CB124500);国家自然科学基金资助项目(90010022)
- DOI：
  中图分类号： O649
- 网络首发：2008-01-10，
  
  纸质出版：2008
- 稿件说明：
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李明涛, 苏进展, 周朝晖, 等. ZnIn₂S₄薄膜喷雾热分解制备及其光电化学性质[J]. 西安交通大学学报, 2008,42(1):106-109.

李明涛, 苏进展, 周朝晖, et al. Preparation of ZnIn₂S₄ Thin Film by Spray Pyrolysis and Its Photoelectrochemical Characteristic[J]. 2008, 42(1): 106-109.
李明涛, 苏进展, 周朝晖, 等. ZnIn₂S₄薄膜喷雾热分解制备及其光电化学性质[J]. 西安交通大学学报, 2008,42(1):106-109. DOI：

李明涛, 苏进展, 周朝晖, et al. Preparation of ZnIn₂S₄ Thin Film by Spray Pyrolysis and Its Photoelectrochemical Characteristic[J]. 2008, 42(1): 106-109. DOI：

摘要

以ZnCl

、InCl

·4H

O和(NH

)

CS为原料

采用喷雾热分解方法在ITO玻璃上制备了高质量的ZnIn

薄膜

使用X射线衍射仪、扫描电镜和分光光度计对制备的薄膜进行了结构、形貌和光学性质的表征

利用基于密度泛函理论的平面波赝势方法对制备的立方相ZnIn

进行了能带结构计算

并采用锁相放大技术研究了ZnIn

电极的光电流作用谱图.结果表明:使用喷雾热分解方法能够制备结晶完好、无针孔的ZnIn

薄膜

制得的薄膜呈立方相

在可见光区(λ>420 nm)有很好的光吸收; 薄膜为间接带隙半导体

价带最高轨道由S3p+In5p构成

导带最低轨道由S3p+In5s轨道构成

作为光电极使用可有很好的光电化学响应

在0.1 mol/L Na

和0.1 mol/L Na

S的混合电解质溶液中

0.3 V电极电势下400 nm处的光电转换效率(IPCE)达到了30%以上.

Abstract

ZnIn

thin films were prepared on ITO conductive glass by spray pyrolysis from a mixed aqueous solution of ZnCl

InCl

·4H

O and(NH

)

CS. Some properties of the deposited film

such as structure

morphology and optical characteristics

were characterized by XRD

SEM

and UV-vis spectrum. Moreover

the band structure and density of states were evaluated with the plane wave pseudopo

tential method based on density functional theory. The photocurrent action spectrum was investigated via lock-in technique. It is found that high crystallinity and pinhole free cubic ZnIn

film with fine adhesion to ITO substrate can be prepared by spray pyrolysis. The deposited film is endowed with a cubic spinel structure with good absorption in visible light. The cubic ZnIn

is a indirect gap semiconductor

whose valence band maximum(HOMO)mainly consists of S3p+In5p orbitals

and the conduction band minimum(LUMO)consists of S3p+In5s orbitals. As a photoanode

the deposited film exhibits a good photoresponse. In 0.1 mol/L Na

+0.1 mol/L Na

S mixed solution

the IPCE achieves over 30% at a potential of 0.3 V vs. SCE(Saturated Calomel Electrode)at 400 nm irradiation wavelength.

关键词

Keywords

references

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ZnIn2S4薄膜喷雾热分解制备及其光电化学性质

Preparation of ZnIn2S4 Thin Film by Spray Pyrolysis and Its Photoelectrochemical Characteristic

DOI：

摘要

Abstract

关键词

Keywords

references

ZnIn₂S₄薄膜喷雾热分解制备及其光电化学性质

Preparation of ZnIn₂S₄ Thin Film by Spray Pyrolysis and Its Photoelectrochemical Characteristic