射频溅射功率密度对Ga:ZnO透明导电薄膜性能的影响

李远洁; 李金逵; 胡晓芬

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射频溅射功率密度对Ga:ZnO透明导电薄膜性能的影响

更新时间：2025-07-09

- 射频溅射功率密度对Ga:ZnO透明导电薄膜性能的影响
- Effect of Sputtering Power Density on Properties of Ga-Doped ZnO Thin Films Grown by Radio Frequency Sputtering
- 西安交通大学学报 2010年44卷第8期页码：58-62
- 作者机构：
  
  西安交通大学电子物理与器件教育部重点实验室,西安,710049
- 作者简介：
- 基金信息：
  
  : 2010-03-15. 作者简介: 李远洁(1974-), 女, 副教授. 基金项目: 国家自然科学基金青年基金资助项目(10904121);西安交通大学科研基金资助项目(XJJ2009039)
- DOI：
  中图分类号： TN304.2
- 网络首发：2010-08-10，
  
  纸质出版：2010
- 稿件说明：
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李远洁, 李金逵, 胡晓芬. 射频溅射功率密度对Ga:ZnO透明导电薄膜性能的影响[J]. 西安交通大学学报, 2010,44(8):58-62.

Effect of Sputtering Power Density on Properties of Ga-Doped ZnO Thin Films Grown by Radio Frequency Sputtering[J]. 2010, 44(8): 58-62.
李远洁, 李金逵, 胡晓芬. 射频溅射功率密度对Ga:ZnO透明导电薄膜性能的影响[J]. 西安交通大学学报, 2010,44(8):58-62. DOI：

Effect of Sputtering Power Density on Properties of Ga-Doped ZnO Thin Films Grown by Radio Frequency Sputtering[J]. 2010, 44(8): 58-62. DOI：

摘要

室温下利用射频磁控溅射法在石英玻璃衬底上制备了掺Ga氧化锌(Ga:ZnO)多晶透明导电薄膜.通过改变磁控溅射生长过程中的溅射功率密度和靶基距

研究了多晶薄膜的透明导电性能与生长参数的相互影响关系.研究结果表明:当溅射时间相同时

随溅射功率密度的增加和靶基距的减小

Ga:ZnO薄膜的厚度增加

从而导致了薄膜导电率升高; 当溅射功率密度为5.3 W/cm

、靶基距为5 cm时

Ga:ZnO薄膜的最小电阻率达到3.1×10

-4

Ω ·cm.透光率测试结果表明:当溅射功率密度增加时

Ga:ZnO薄膜中紫外光学吸收发生了红移; 增加溅射功率密度会造成薄膜中掺杂缺陷密度增加

产生禁带之间Urbach带尾能级吸收效应; GaZnO薄膜在可见光范围中的平均透光率大于80%.

Abstract

Polycrystalline Ga-doped ZnO(Ga:ZnO)thin films are deposited on quartz glass substrates at room temperature by using radio frequency magnetron sputtering. The correlation between the growth conditions and Ga:ZnO film properties is studied through modulation of sputtering power density and target-to-substrate distance. It is found that the conductivity of Ga:ZnO films increases with increasing of power density and decreasing of target-to-substrate distance. The lowest conductivity of Ga:ZnO films is 3.1×10

-4

Ω·cm grown when the power density is 5.3 W/cm

and the target-to-substrate distance is 5 cm. The red shift in the optical UV absorption of Ga:ZnO films grown under high power density occurs

and results in the absorption effect through Urbach-tail states with increasi

ng the doping defect density in the Ga:ZnO thin films. The average transmittance of Ga:ZnO films is above 80% in the visible spectrum range.

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references

LOOK D C. Electrical and optical properties of p-type ZnO [J]. Semicond Sci Technol, 2005, 20(4):55-61.

OZGUR U, ALIVOV Y I, LIU C, et al. A comprehensive review of ZnO materials and devices [J]. J Appl Phys, 2005, 98(4): 041301-041303.

ABDUEV A K, AKHMEDUV A K, ASVAROV A S, et al. Effect of growth temperature on properties of transparent conducting gallium-doped ZnO films[J]. Semiconductors, 2010, 44(1):32-36.

UPKES J, RECH B, KLUTH O, et al. Surface textured MF-sputtered ZnO films for microcrystalline silicon-based thin-film solar cells [J]. Solar Energy Materials Solar Cells, 2006, 90(18/19):3054-3060.

SAHU D R, HUANG J L. Development of ZnO-based transparent conductive coatings [J]. Solar Energy Materials Solar Cells, 2009, 93(11):1923-1927.

NAYAK P K, YANG J, KIM J, et al. Spin-coated Ga-doped ZnO transparent conducting thin films for organic light-emitting diodes[J]. J Phys D: Appl Phys, 2009, 42(13):035102-035107.

SNURE M, TIWARI A. Structural, electrical, and optical characterizations of epitaxial Zn1-xGaxO films grown on sapphire(001)substrate [J]. J Appl Phys, 2007, 101(12):124912-124917.

AHN B D, KIM J H, KANG H S, et al. Thermally stable, highly conductive, and transparent Ga-doped ZnO thin films [J]. Thin Solid Films, 2008, 516(7):1382-1385.

KAUL A R, GORBENKO O Y, BOTEV A N, et al. MOCVD of pure and Ga-doped epitaxial ZnO [J]. Superlatt Microstruct, 2005, 38(4/6):272-282.

LIANG Shuang, Bi Xiaofang. Structure, conductivity, and transparency of Ga-doped ZnO thin films arising from thickness contributions [J]. J Appl Phys, 2008, 104(11):113533-113537.

PARK Y J, KIM H N, SHIN H H. Effects of deposition temperature on the crystallinity of Ga-doped ZnO thin films on glass substrates prepared by sputtering method [J]. Appl Surf Sci, 2009, 255(17):7532-7536.

CHEN Dingyeng, HSU C Y. Growth of Ga-doped ZnO films with ZnO buffer layer by sputtering at room temperature [J]. Superlatt Microstruct, 2008, 44(6):742-753.

YAMADA T, MIYAKE A, KISHIMOTO S, et al. Low resistivity Ga-doped ZnO thin films of less than 100 nm thickness prepared by ion plating with direct current arc discharge [J]. Appl Phys Lett, 2007, 91(5):051915-051917.

MINAMI T, MIYATA T, HONMA Y, et al. Effect of spatial relationship between arc plasma and substrate on the properties of transparent conducting Ga-doped ZnO thin films prepared by vacuum arc plasma evaporation [J]. Thin Solid Films, 2009, 517(24):6824-6828.

SONG Shumei, YANG Tianlin, XIN Yanqing, et al. Effect of GZO thickness and annealing temperature on the structural, electrical and optical properties of GZO/Ag/GZO sandwich films [J]. Current Appl Phys, 2010, 10(2):452-456.

伞海生,李斌,冯博学,等,由缺陷引起的Burstein-Moss和带隙收缩效应对CdIn2O4透明导电薄膜光带隙的影响 [J].物理学报,2005, 54(2):0842-0847.

SAN Haisheng, LI Bin, FENG Boxue, et al. Effect on optical band-gap of transparent and conductive CdIn2O4 thin film due to defects-induced Burstein-Moss and band-gap narrowing characteristics [J]. Acta Physica Sinica, 2005, 54(2):0842-0847.

ZnO纳米线膜的可控生长及其量子限域效应研究. 西安交通大学学报,2010,44(4):82-86.

氧化锌/银双层膜负反馈阴极电极的制备及性能研究. 西安交通大学学报,2007,41(12):1470-1473.

直流磁控溅射氧化铟锡薄膜的低温等离子退火研究. 西安交通大学学报,2007,41(2):236-240.

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