物理气相传输（PVT)法生长碳化硅的晶体形态热应力分析

史永贵; 戴培赟; 杨建锋; 刘光亮

您当前的位置：

首页 >

文章列表页 >

物理气相传输（PVT)法生长碳化硅的晶体形态热应力分析

更新时间：2025-07-09

- 物理气相传输（PVT)法生长碳化硅的晶体形态热应力分析
- Thermal Stress Analysis of Crystal Morphology in Growth of Silicon Carbide Bulk Crystal by PVT Method
- 西安交通大学学报 2011年45卷第1期页码：117-121
- 作者机构：
  
  西安交通大学金属材料强度国家重点实验室,西安,710049
- 作者简介：
- 基金信息：
  
  : 2010-06-24. 作者简介: 史永贵(1982-),男,博士生;杨建锋(联系人),男,教授,博士生导师. 基金项目: 国家自然科学基金资助项目(50672073)
- DOI：
  中图分类号： TN304.2
- 网络首发：2011-01-10，
  
  纸质出版：2011
- 稿件说明：
移动端阅览
史永贵, 戴培赟, 杨建锋, 等. 物理气相传输（PVT)法生长碳化硅的晶体形态热应力分析[J]. 西安交通大学学报, 2011,45(1):117-121.

Thermal Stress Analysis of Crystal Morphology in Growth of Silicon Carbide Bulk Crystal by PVT Method[J]. 2011, 45(1): 117-121.
史永贵, 戴培赟, 杨建锋, 等. 物理气相传输（PVT)法生长碳化硅的晶体形态热应力分析[J]. 西安交通大学学报, 2011,45(1):117-121. DOI：

Thermal Stress Analysis of Crystal Morphology in Growth of Silicon Carbide Bulk Crystal by PVT Method[J]. 2011, 45(1): 117-121. DOI：

摘要

利用有限元方法对物理气相传输(PVT)法生长碳化硅晶体过程中出现的3种典型生长形态进行了热应力分析.结果表明:在3种晶体生长形态中

热应力最大值都出现在晶体与石墨坩埚盖接触区域; 平面型生长形态中温度场及相应的热应变场和等效应力场分布均比较均匀; 凸面型和凹面型生长形态的温度场及相应的热应变场和等效应力场分布均变化较大

而且在凸面型的中间区域和凹面型的边缘区域也存在较大的应力值. 因此

为提高晶体质量

提出在石墨坩埚盖上沉积或反应生成碳化硅过渡层来减小热应力的改良方法

同时调整碳化硅晶体生长系统

尽量保证碳化硅晶体的平面型生长形态.

Abstract

Three kinds of classical growth morphologies appearing in the physical vapor transport(PVT)growth process of silicon carbide bulk crystal are analyzed with regard to thermal stress by finite elements method. The results indicate that the maximum of thermal stress is located in the adjacent region of the silicon carbide and the graphite crucible lid. The distributions of the temperature field

and the corresponding thermal strain field and equivalent stress field get more homogenous in the flat growth morphology than that in the concave and convex growth morphology. And stress concentration appears at the center of the concave growth morphology and at the margin of the convex growth morphology. For improving the crystal quality

transition layer of silicon carbide formed by deposition or reaction on the graphite crucible lid is suggested to reduce the thermal stress

and the growth system of SiC crystal should be modified to maintain crystal growth in the flat morphology.

关键词

Keywords

references

杨银堂,高洪福,温浩宇.碳化硅半导体技术新进展 [J].西安电子科技大学学报,1998,25(4): 86-90.

YANG Yin-tang, GAO Hong-fu, WEN Hao-yu. The recent process of silicon carbide semiconductor technology [J]. Journal of Xidian University, 1998,25(4): 86-90.

WEITZEL C E. Silicon carbide high frequency devices [J]. Mater Sci Forum, 1998, 907: 264-268.

JENNY J R, MÜLLER S G, POWELL A, et al. High purity semi-insulating 4H-SiC grown by the seeded-sublimation method [J].Journal of Electronic Material, 2002, 31(5): 366-369.

陈治明,王建农.半导体器件材料物理学基础[M].北京:科学出版社, 2003: 360-361.

刘喆,徐现刚.SiC单晶生长[J].材料科学与工程学报,2003, 21(2): 274-278.

LIU Zhe, XU Xian-gang. Growth of bulk SiC [J]. Journal of Material Science and Engineering, 2003, 21(2): 274-278.

张群社,陈治明.感应加热线圈对PVT法生长大直SiC晶体的影响[J].西安理工大学学报,2007,23(1):83-86.

ZHANG Qun-she, CHEN Zhi-ming. The effect of inductive coil on the large-size SiC crystal growth by PVT method [J]. Journal of Xi'an University of Technology, 2007, 23(1): 83-86.

王英民,宁丽娜,彭燕,等.6H-SiC成核表面形貌与缺陷产生的研究[J].人工晶体学报,2009, 38(1): 7-10.

WANG Ying-min, NING Li-na, PENG Yan, et al. Analysis on surface morphology and defect generation at the initial stages of 6H-SiC sublimation growth [J]. Journal of Synthetic Crystals, 2009, 38(1): 7-10.

BAKIN A S, DOROZHKIN S I, LEBEDEV A O, et al. Stress and misoriented area formation under large silicon carbide boule growth [J]. Journal of Crystal Growth, 1999, 198/199(2): 1015-1018.

MA R-H, ZHANG H, HA S, et al. Integrated process modeling and experimental validation of silicon carbide sublimation growth [J].Journal of Crystal Growth, 2003, 252(4): 523-537.

BÖTTCHER K, CLIFFE K A. Three-dimensional thermal stresses in on-axis grown SiC crystals [J]. Journal of Crystal Growth, 2005, 284(3/4): 425-433.

GEISER J, KLEIN O, PHILIP P. Numerical simulation of temperature fields during the sublimation growth of SiC single crystals, using WIAS-HiTNIHS [J]. Journal of Crystal Growth, 2006,303(1):352-356.

BOGDANOV M V, GALYUKOV A O, KARPOV S Y, et al. Virtual reactor as a new tool for modeling and optimization of SiC bulk crystal growth [J]. Journal of Crystal Growth, 2001, 225(2/4): 307-311.

KLEIN O, PHILIP P, SPREKELS J, et al. Radiation and convection-driven transient heat transfer during sublimation growth of silicon carbide single crystals [J]. Journal of Crystal Growth, 2001, 222(4): 832-851.

郝跃,彭军,杨银堂.碳化硅宽带隙半导体技术[M].北京:科学出版社,2000: 269-271.

沈曾民.新型碳材料[M].北京:化学工业出版社,2003: 40-42.

BOLEY B, WEINER J. Theory of thermal stresses [M]. New York, USA: Wiley, 1960.

SUDARSHAN T S, MAXIMENKO S I. Bulk growth of single crystal silicon carbide [J]. Microelectronic Engineering, 2006, 83(1): 155-159.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

时序卷积网络在转子热固耦合应力预测及寿命评估中的应用

热-结构耦合作用下压电式力传感器热应力分析

热应力对金属棒料内部损伤的机理研究

板式固体氧化物燃料电池的热应力分析

参数曲面三角网格生成的改进波前法