TiO2/Al2O3-Al2O3-TiO2/Al2O3绝缘结构的真空沿面闪络特性

何良; 李盛涛; 张拓

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TiO₂/Al₂O₃-Al₂O₃-TiO₂/Al₂O₃绝缘结构的真空沿面闪络特性

更新时间：2025-07-09

- TiO₂/Al₂O₃-Al₂O₃-TiO₂/Al₂O₃绝缘结构的真空沿面闪络特性
- Surface Flashover Performance of TiO₂/Al₂O₃-Al₂O₃-TiO₂/Al₂O₃ Insulation System in Vacuum
- 西安交通大学学报 2012年46卷第2期页码：93-99
- 作者机构：
  
  西安交通大学电力设备电气绝缘国家重点实验室,西安,710049
- 作者简介：
- 基金信息：
  
  : 2011-06-04. 作者简介: 何良(1987-),男,硕士生;李盛涛(通信作者),男,教授,博士生导师. 基金项目: 国家杰出青年科学基金资助项目(50625721)
- DOI：
  中图分类号： TM855
- 网络首发：2012-02-10，
  
  纸质出版：2012
- 稿件说明：
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何良, 李盛涛, 张拓. TiO₂/Al₂O₃-Al₂O₃-TiO₂/Al₂O₃绝缘结构的真空沿面闪络特性[J]. 西安交通大学学报, 2012,46(2):93-99.

Surface Flashover Performance of TiO₂/Al₂O₃-Al₂O₃-TiO₂/Al₂O₃ Insulation System in Vacuum[J]. 2012, 46(2): 93-99.
何良, 李盛涛, 张拓. TiO₂/Al₂O₃-Al₂O₃-TiO₂/Al₂O₃绝缘结构的真空沿面闪络特性[J]. 西安交通大学学报, 2012,46(2):93-99. DOI：

Surface Flashover Performance of TiO₂/Al₂O₃-Al₂O₃-TiO₂/Al₂O₃ Insulation System in Vacuum[J]. 2012, 46(2): 93-99. DOI：

摘要

基于变插入层介电常数的多层绝缘结构能改善电场分布、提高真空沿面闪络特性.通过真空热压烧结制备了TiO

/Al

-Al

-TiO

/Al

(A-B-A)3层绝缘结构

A层w(TiO

)为0.5%到20%.测量了该绝缘结构的真空沿面闪络特性

发现闪络特性随w(TiO

)的增加而提高

当w(TiO

)为20%时

其脉冲初次闪络电压较同等厚度的Al

陶瓷提高了63%.研究发现:A层的介电常数可由w(TiO

)调控

介电常数的增大能有效降低真空-绝缘子-阴极三结合点处的电场强度; A层表面存在的TiO

颗粒可以减小二次电子发射系数并改善表面电荷分布; TiO

的电导率虽比Al

高

但其仍为绝缘体

即使TiO

含量较高时也不会形成贯穿的导电通道.

Abstract

For the fact that inserting permittivity-gradient multilayer insulation reduces electric field and improves the characteristics of surface flashover in vacuum

a new insulation system of TiO

-Al

-TiO

/Al

(A-B-A)is designed by vacuum hot-pressing sintering

where the mass fraction of TiO

in layer A was managed from 0.5% to 20%. Then the surfa

ce flashover voltage of samples in vacuum are experimentally investigated. It is found that the flashover voltage is increased with the additions of TiO

and when the mass fraction of TiO

reaches to 20% the flashover voltage is improved by 63% compared with the Al

ceramic. The results reveal that the permittivity of TiO

/Al

ceramic is changed by different additions of TiO

and the increasing permittivity weakens the electric field at triple junction. The TiO

existing on the surface of layer A reduces the secondary electron emission coefficient and perfects the surface charge distribution. It is also concluded that even if the conductivity of TiO

is higher than Al

and the mass fraction of TiO

gets larger

but no throughout conductive path generates due to the insulation essentiality of TiO

关键词

Keywords

references

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