顾建龙.n型ZnO欧姆接触及肖特基接触电极的研究[D].浙江大学,2013(10).

郭小川,彭文博,蔡亚辉,郭书文,赵小龙,贺永宁.小体积电压输出型ZnO惠斯通电桥式紫外探测单元[J].西安交通大学学报,2022(01).

祁晓萌,彭文博,赵小龙,贺永宁.基于高阻ZnO薄膜的光电导型紫外探测器[J].物理学报,2015(19).

李新坤,张天宇,王增斌.ZnO薄膜器件欧姆电极的高掺杂接触法制备[J].半导体光电,2014(04).

赵小龙,康雪,陈亮,张忠兵,刘金良,欧阳晓平,彭文博,贺永宁.ZnO半导体电导型X射线探测器件研究[J].物理学报,2014(09).

刘瑞斌,邹炳锁.Lasing behaviour from the condensation of polaronic excitons in a ZnO nanowire[J].Chinese Physics B,2011(04).

韦敏,邓宏,王培利,李阳.ZnO基紫外探测器的研究进展与关键技术[J].材料导报,2007(12).

常艳玲,张琦锋,孙晖,吴锦雷.ZnO纳米线双绝缘层结构电致发光器件制备及特性研究[J].物理学报,2007(04).

魏学成,赵有文,董志远,李晋闽.ZnO单晶的缺陷及其对材料性质的影响[J].半导体学报,2006(10).

赵懿琨,连洁,张飒飒,王公堂,宫文栎,于元勋,卜刚.ZnO基紫外探测器的研究进展[J].材料导报,2006(01).

Zhao Xiaolong,Huang Danyang,He Yongning,Peng Wenbo,Li Gaoming.Demonstration of an n-ZnO/p-Si/n-Si heterojunction bipolar phototransistor for X-ray detection[J].Solid State Electronics,2022.

Zhao Xiaolong,Huang Danyang,Li Ganggui,He Yongning,Peng Wenbo,Li Gaoming.High sensitivity X-ray detector based on a 25 µm-thick ZnO film[J].Sensors and Actuators: A. Physical,2022.

Guo Shuwen,Zhao Xiaolong,He Yongning,Pan Zijian,Yang Mingchao,Cai Yahui,Fu Xianghe,Zhang Liangliang.Low-Voltage and High-Gain Ultraviolet Detector Based on 4H-SiC n-p-n Bipolar Phototransistor[J].IEEE TRANSACTIONS ON ELECTRON DEVICES,2021.

aff > .Study of a Neutron-resistant p+-Si/n-ZnO Photodetector with Avalanching Gain[J].Sensors and Actuators A: Physical,2020.

Wenbo Peng,Zijian Pan,Fangpei Li,Yahui Cai,Yongning He.Pyro-phototronic effect enhanced ZnO nanowire-based tri-layer heterojunction for visible light sensing and communication[J].Nano Energy,2020.

Edgars Butanovs,Alexei Kuzmin,Jelena Butikova,Sergei Vlassov,Boris Polyakov.Synthesis and characterization of ZnO/ZnS/MoS2 core-shell nanowires[J].Journal of Crystal Growth,2017.

Wang Zhaona,Yu Ruomeng,Wang Xingfu,Wu Wenzhuo,Wang Zhong Lin.Ultrafast Response p-Si/n-ZnO Heterojunction Ultraviolet Detector Based on Pyro-Phototronic Effect.[J].Advanced materials (Deerfield Beach, Fla.),2016.

Yongning He,Xiaolong Zhao,Xuyang Wang,Liang Chen,Wenbo Peng,Xiaoping Ouyang.Characterizations of an X-ray detector based on a Zn 2 SiO 4 film[J].Sensors & Actuators: A. Physical,2015.

Haruyuki Endo,Tetsuya Chiba,Kazuyuki Meguro,Kyo Takahashi,Mitsuru Fujisawa,Shigeaki Sugimura,Shinya Narita,Yasube Kashiwaba,Eiichi Sato.Fabrication and characterization of a ZnO X-ray sensor using a high-resistivity ZnO single crystal grown by the hydrothermal method[J].Nuclear Inst. and Methods in Physics Research, A,2011.

Sachindra Nath Das,Kyeong-Ju Moon,Jyoti Prakash Kar,Ji-Hyuk Choi,Junjie Xiong,Tae Il Lee,Jae-Min Myoung.ZnO single nanowire-based UV detectors[J].Applied Physics Letters,2010.

Huang Michael H.,Mao Samuel,Feick Henning,Yan Haoquan,Wu Yiying,Kind Hannes,Weber Eike,Russo Richard,Yang Peidong.ChemInform Abstract: Room-Temperature Ultraviolet Nanowire Nanolasers.[J].ChemInform,2010.

Nause J,Nemeth B.Pressurized melt growth of ZnO boules[J].Semiconductor Science and Technology,2005.

Kania D.R.,Landstrass M.I.,Plano M.A.,Pan L.S.,Han S..Diamond radiation detectors[J].Diamond and Related Materials,1993(5-7).

(美) 施敏, ( ) 伍国钰, 著.半导体器件物理[M].西安交通大学出版社,2008.

马宏宇.ZnO量子点及其紫外探测器的制备与特性研究[D].中国科学院大学(中国科学院长春光学精密机械与物理研究所),2021(01).