针对样品表面吸附和污染导致扫描电子显微镜能谱仪成像质量和检测精度下降的问题,提出了一种扫描电镜能谱分析方法——吸附表面二次电子发射数值计算模型。首先,采用Polanyi位势理论在Cu表面构造了N
2
多层吸附模型;其次,考虑吸附对功函数及电子散射过程的影响,采用Monte Carlo方法追踪电子在材料和吸附层内的散射轨迹,建立了电子与N
2
分子散射模型;最后,将N
2
多层吸附模型与电子与N
2
分子散射模型合并,建立了吸附表面二次电子发射的精确模拟模型,用于计算N
2
吸附分子对能谱的影响规律。数值计算结果表明,当N
2
分子吸附量增大至3×10
16
cm
-2
时,二次电子能谱的最可几能量和半峰宽分别增大了3.16、4.76倍,二次电子比例减少至原来的215。采用所提模型对探测器进行优化设计,能够提高二次电子信号收集效率、降低噪声信号、提高分辨率。相比以往模型,所提模型突破了仅适用于分子吸附量小于3×10
15
cm
-2
的限制,并更真实地描述吸附对电子散射的影响,为研究扫描电镜环境下复杂表面状态的能谱提供了可靠的分析方法。
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