针对碳化硅光学元件已有的化学机械抛光、磁流变抛光、电化学抛光和催化剂辅助抛光等方式存在材料去除率低、成本高等问题
提出机器人气囊抛光方法
并对气囊抛光特性、抛光头机械结构进行了研究。首先基于Preston理论和赫兹接触理论以及速度分析建立了材料理论去除模型
并对去除函数进行了仿真
再此基础上设计了气囊抛光磨头装置。然后对非球面碳化硅元件开展了单点和多点抛光
实验验证了去除函数的精确性和稳定性。最后通过粗抛和精抛进行加工应用验证
实验结果表明
所提出方法能够有效实现碳化硅光学元件抛光
并且去除函数精度高稳定性强
通过3个周期的粗抛、4个周期的精抛
面形收敛率分别为69.4%、51.9%
且收敛速度快、加工精度高。
何艳,苑泽伟,段振云,张幼军.单晶碳化硅晶片高效超精密抛光工艺[J].哈尔滨工业大学学报,2019(01).
曲兴田,王宏一,樊成,吴文征,刘孝龙.等重叠率螺旋线的非球面抛光轨迹规划[J].西安交通大学学报,2015(06).
潘继生,阎秋生,路家斌,徐西鹏,陈森凯.集群磁流变平面抛光加工技术[J].机械工程学报,2014(01).
潘继生,阎秋生,徐西鹏,童和平,祝江停,白振伟.单晶SiC基片的集群磁流变平面抛光加工[J].中国机械工程,2013(18).
王春锦,郭隐彪,王振忠,潘日,谢银辉.光学元件气囊抛光系统动态去除函数建模[J].机械工程学报,2013(17).
牟志超,郑子文,舒勇,王贵林.基于球形磨头抛光技术的SiC抛物面镜抛光[J].航空精密制造技术,2012(05).
School of Mechanical and Manufacturing Engineering, UNSW Sydney, NSW 2052, Australia,School of Mechanical and Manufacturing Engineering, UNSW Sydney, NSW 2052, Australia,School of Mechanical and Manufacturing Engineering, UNSW Sydney, NSW 2052, Australia,Griffith School of Engineering, Griffith University, Nathan, QLD 4111, Australia,School of Mechanical Engineering, Zhejiang University of Technology, Hangzhou, China,School of Mechanical and Manufacturing Engineering, UNSW Sydney, NSW 2052, Australia.The wear mechanisms of reaction bonded silicon carbide under abrasive polishing and slurry jet impact conditions[J].Wear,2018.
Zhimin Rao,Bing Guo,Quanli Zhang,Xingyu Fu,Qingliang Zhao.Form error compensation in soft wheel polishing by contact force optimization[J].The International Journal of Advanced Manufacturing Technology,2017.
Jing Lu,Guang Qiu Hu,Hua Guo,Xi Peng Xu.Processing Single Crystal SiC with Semi-Consolidated Polishing Film[J].Materials Science Forum,2016.
Q.F. Luo,J. Lu,X.P. Xu.A comparative study on the material removal mechanisms of 6H-SiC polished by semi-fixed and fixed diamond abrasive tools[J].Wear,2016.
Uma Rames Krishna Lagudu,Shintaro Isono,Sitaraman Krishnan,S.V. Babu.Role of ionic strength in chemical mechanical polishing of silicon carbide using silica slurries[J].Colloids and Surfaces A: Physicochemical and Engineering Aspects,2014.
Akihisa Kubota,Masahiko Yoshimura,Sakae Fukuyama,Chihiro Iwamoto,Mutsumi Touge.Planarization of C-face 4H-SiC substrate using Fe particles and hydrogen peroxide solution[J].Precision Engineering,2011(1).
H.Y. Tam,H.B. Cheng,Y.W. Wang.Removal rate and surface roughness in the lapping and polishing of RB-SiC optical components[J].Journal of Materials Processing Tech.,2007.
Haobo Cheng,Zhijing Feng,Yingwei Wang,Shuting Lei.Magnetorheological Finishing of SiC Aspheric Mirrors[J].Materials and Manufacturing Processes,2005.
C. L. Neslen,W. C. Mitchel,R. L. Hengehold.Effects of Process Parameter Variations on the Removal Rate in Chemical Mechanical Polishing of 4H-SiC[J].Journal of Electronic Materials,2001.
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