To enhance the temperature uniformity of wafer bonding platforms for integrated circuits

the mainstream 200 mm wafer bonding platform is selected as the subject of research

and heating experiments are conducted on this platform. A three-dimensional heat transfer numerical model of the bonding process is developed and validated to study the temperature formation and distribution within the bonding platform. A simple and effective strategy is proposed to significantly improve the temperature uniformity of the bonding platform. The research findings reveal that the non-centrally symmetrical distribution of heating wires wound inside the heating plate leads to uneven temperature distribution on the working surface of the bonding platform. Without considering the alignment of high and low-temperature zones of the upper and lower heating plates

the overall temperature uniformity of the working surface is 3.2%

with a radial temperature uniformity of 1.1 ℃. Rotating either the upper or lower heating plate provides spatial compensation for the distribution of high and low-temperature zones of the two heating plates

resulting in a substantial enhancement in the temperature uniformity of the bonding platform. Following a 50° counterclockwise rotation of the upper heating plate

the overall temperature uniformity of the working surface of the bonding platform achieves 1.3%

with the radial temperature uniformity reaching 0.3 ℃. This research contributes to a deeper comprehension of heat transfer and temperature distribution within the wafer bonding platform

which is of reference significance to the fine design of bonding platforms and the improvement of the bonding processes.