Impact of Electron Irradiation on Dynamic Characteristics of SiC Power MOSFETs

FU Xianghe; ZHAO Xiaolong; PENG Wenbo; GUO Shuwen; CAI Yahui; HE Yongning

doi:10.7652/xjtuxb202211010

您当前的位置：

首页 >

文章列表页 >

Impact of Electron Irradiation on Dynamic Characteristics of SiC Power MOSFETs

更新时间：2025-07-09

- Impact of Electron Irradiation on Dynamic Characteristics of SiC Power MOSFETs
- Vol. 56, Issue 11, Pages: 95-103(2022)
- 作者机构：
  
  1. 西安交通大学电子与信息学部,西安,710049
  2. 西安市微纳电子与系统集成重点实验室,西安,710049
- 作者简介：
- 基金信息：
- DOI：10.7652/xjtuxb202211010
  CLC： TN386.1
- Online First：10 November 2022，
  
  Published：2022
- 稿件说明：
移动端阅览
FU Xianghe, ZHAO Xiaolong, PENG Wenbo, et al. Impact of Electron Irradiation on Dynamic Characteristics of SiC Power MOSFETs[J]. 2022, 56(11): 95-103.
DOI：

FU Xianghe, ZHAO Xiaolong, PENG Wenbo, et al. Impact of Electron Irradiation on Dynamic Characteristics of SiC Power MOSFETs[J]. 2022, 56(11): 95-103. DOI： 10.7652/xjtuxb202211010.

摘要

针对SiC功率场效应晶体管在太空、核工业等高能粒子辐照环境下应用时的老化失效问题

以1 200 V SiC MOSFET器件为对象

研究了电子辐照对SiC MOSFET器件动态特性影响及机理。在10 MeV电子束下对SiC MOSFET器件进行200 kGy剂量的辐照; 然后

采用双脉冲测试电路对SiC MOSFET器件进行开关测试

并提取开关速度以及开关瞬态能量损耗等参数; 接着对器件进行静态特性测试得到器件的阈值电压、栅极电阻、寄生电容等参数; 最后

对比辐照与未辐照器件动态和静态特性参数变化分析电子辐照对SiC MOSFET器件动态特性影响机理。分析结果表明:在漏极电压800 V、漏极电流15 A、栅极外接电阻200 Ω的测试条件下

辐照后器件开启延迟时间减小11.6 ns

开启瞬态能量损耗减小0.18 μJ

关断延迟时间增大48.4 ns

关断瞬态能量损耗增大0.11 μJ。结合器件静态特性参数分析发现:辐照后氧化层中正固定电荷增加7.14×10

-2

器件阈值电压减小1.5 V; 电子辐照在氧化层中电离产生电子空穴对

氧化层陷阱捕获空穴形成带正电的固定电荷

使得器件阈值电压减小

这是导致器件在电子辐照后开启速度变快

关断速度变慢的主要原因。该研究结果可为SiC功率器件在辐照环境中的应用以及制造厂商提高SiC MOSFET在辐照环境中的可靠性提供一定的参考。

Abstract

This paper studies the impact of electron irradiation on the dynamic characteristics of 1 200 V SiC MOSFETs and the corresponding mechanism in an attempt to tackle the aging of SiC power field-effect transistors used in high-energy particle irradiation applications such as the space and nuclear industry. First

the SiC MOSFET is irradiated with a dose of 200 kGy under 10 MeV elec

tron beam. Then the SiC MOSFET is tested for switching in a double-pulse test circuit

and parameters such as switching speed and switching transient energy loss are recorded. After that

the static characteristics of the device are tested to obtain the threshold voltage

gate resistance

parasitic capacitance and other parameters. Finally

the impact of electron irradiation on the dynamic characteristics of SiC MOSFETs is analyzed by comparing the dynamic and static characteristic parameters of irradiated and non-irradiated devices. The results show that the turn-on delay time of the irradiated device is reduced by 11.6 ns

the turn-on transient energy loss is reduced by 0.18 μJ

the turn-off delay time increases by 48.4 ns

and the turn-off transient energy loss increases by 0.11 μJ under a drain voltage of 800 V

a drain current of 15 A

and an external gate resistance of 200 Ω. It is found that the positive fixed charge in the oxide layer increases by 7.14×10

-2

after irradiation

and the threshold voltage of the device decreases by 1.5 V; ionizing electron irradiation in the oxide layer creates electron hole pairs and the oxide layer traps the holes and form positive fixed charges

which reduces the threshold voltage of the device. This is the main reason for faster turn-on and slower turn-off of the device after electron irradiation. The research results can provide some reference for the application of SiC power devices in the irradiation environment and for manufacturers to improve the reliability of SiC MOSFETs in the irradiation environment.

关键词

Keywords

references

白志强, 张玉明, 汤晓燕, 等. 4H-SiC功率MOSFET可靠性研究进展 [J]. 电子与封装, 2022, 22(4): 1-9.

BAI Zhiqiang, ZHANG Yuming, TANG Xiaoyan, et al. Research progress on reliability of 4H-SiC power MOSFET [J]. Electronics & Packaging, 2022, 22(4): 1-9.

陈明. 高温功率循环下绝缘栅双极型晶体管失效特征及机理分析 [J]. 西安交通大学学报, 2014, 48(4): 119-126.

CHEN Ming. Failure characteristics and mechanism analysis of IGBT modules under high-temperature power cycling [J]. Journal of Xi'an Jiaotong University, 2014, 48(4): 119-126.

陈明, 胡安, 刘宾礼. 绝缘栅双极型晶体管失效机理与寿命预测模型分析 [J]. 西安交通大学学报, 2011, 45(10): 65-71.

CHEN Ming, HU An, LIU Binli. Failure mechanism and lifetime prediction modeling of IGBT power electronic devices [J]. Journal of Xi'an Jiaotong University, 2011, 45(10): 65-71.

周荔丹, 闫朝鑫, 姚钢, 等. 空间辐射环境对航天器分布式电力系统关键部件的影响及应对策略 [J]. 电工技术学报, 2022, 37(6): 1365-1380.

ZHOU Lidan, YAN Chaoxin, YAO Gang, et al. Influence of space radiation environment on critical components of spacecraft distributed power system and countermeasures [J]. Transactions of China Electrotechnical Society, 2022, 37(6): 1365-1380.

BALIGA B J. Silicon carbide power devices [M]. New Jersey, USA: World Scientific, 2005.

刘超铭, 王雅宁, 魏轶聃, 等. SiC功率器件辐照效应研究进展 [J]. 电子与封装, 2022, 22(6): 1-12.

LIU Chaoming, WANG Yaning, WEI Yidan, et al. Progress in the study of irradiation effects of SiC power devices [J]. Electronics Packaging, 2022, 22(6): 1-12.

POPELKA S, HAZDRA P. Effect of electron irradiation on 1700V 4H-SiC MOSFET characteristics [J]. Materials Science Forum, 2016, 858: 856-859.

LEBEDEV A A, KOZLOVSKI V V, LEVINSHTEIN M E, et al. Impact of 0.9 MeV electron irradiation on main properties of high voltage vertical power 4H-SiC MOSFETs [J]. Radiation Physics and Chemistry, 2020, 177: 109200.

KOZLOVSKI V V, VASIL'EV A E, EMTSEV V V, et al. Dependence of the kinetics of radiation-induced defect formation on the energy absorbed by Si and SiC when exposed to fast charged particles [J]. Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2019, 13(6): 1155-1159.

LEBEDEV A A, KOZLOVSKI V V, LEVINSHTEIN M E, et al. Effect of high energy(15 MeV)proton irradiation on vertical power 4H-SiC MOSFETs [J]. Semiconductor Science and Technology, 2019, 34(4): 045004.

LEBEDEV A A, LEVINSHTEIN M E, IVANOV P A, et al. Effect of irradiation with 15-MeV protons on low frequency noise in power SiC MOSFETs [J]. Semiconductors, 2019, 53(12): 1568-1572.

NISKANEN K, TOUBOUL A D, GERMANICUS R C, et al. Impact of electrical stress and neutron irradiation on reliability of silicon carbide power MOSFET [J]. IEEE Transactions on Nuclear Science, 2020, 67(7): 1365-1373.

PRINCIPATO F, ALLEGRA G, CAPPELLO C, et al. Investigation of the impact of neutron irradiation on SiC power MOSFETs lifetime by reliability tests [J]. Sensors, 2021, 21(16): 5627.

MATSUDA T, YOKOSEKI T, MITOMO S, et al. Change in characteristics of SiC MOSFETs by gamma-ray irradiation at high temperature [J]. Materials Science Forum, 2016, 858: 860-863.

LIANG Xiaowen, CUI Jiangwei, ZHENG Qiwen, et al. Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET [J]. Radiation Effects and Defects in Solids, 2020, 175(5/6): 559-566.

HU Dongqing, ZHANG Jingwei, JIA Yunpeng, et al. Impact of different gate biases on irradiation and annealing responses of SiC MOSFETs [J]. IEEE Transactions on Electron Devices, 2018, 65(9): 3719-3724.

TAKEYAMA A, MAKINO T, OKUBO S, et al. Radiation response of negative gate biased SiC MOSFETs [J]. Materials, 2019, 12(17): 2741.

刘翠翠, 郭刚, 李治明, 等. SiC MOSFET单粒子效应研究现状 [J]. 核技术, 2022, 45(1): 1-14.

LIU Cuicui, GUO Gang, LI Zhiming, et al. Recent research progress of single particle effect of SiC MOSFET [J]. Nuclear Techniques, 2022, 45(1): 1-14.

于庆奎, 曹爽, 张洪伟, 等. SiC器件单粒子效应敏感性分析 [J]. 原子能科学技术, 2019, 53(10): 2114-2119.

YU Qingkui, CAO Shuang, ZHANG Hongwei, et al. Single event effect sensitivity analysis of SiC device [J]. Atomic Energy Science and Technology, 2019, 53(10): 2114-2119.

赵延军, 吕均涛, 刘卫霞, 等. 10 MeV电子加速器出束能量参数测量及其初步应用 [J]. 辐射研究与辐射工艺学报, 2020, 38(4): 75-80.

ZHAO Yanjun, LV Juntao, LIU Weixia, et al. Measurement of energy parameters and preliminary applications of 10 MeV linear accelerator electron beam [J]. Journal of Radiation Research and Radiation Processing, 2020, 38(4): 75-80.

BALIGA B J. Fundamentals of power semiconductor devices [M]. Berlin, Germany: Springer, 2008.

MCWHORTER P J, WINOKUR P S. Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistors [J]. Applied Physics Letters, 1986, 48(2): 133-135.

WEI Jiaxing, LIU Siyang, LI Sheng, et al. Extraction method of interfacial injected charges for SiC power MOSFETs [J]. Superlattices and Microstructures, 2018, 113: 706-712.

李东洵. 4H-SiC功率VDMOSFET器件辐照效应及加固方法研究 [D]. 西安: 西安电子科技大学, 2021.

郜锦侠, 张义门, 汤晓燕, 等. C-V法提取SiC隐埋沟道MOSFET沟道载流子浓度 [J]. 物理学报, 2006, 55(6): 2992-2996.

GAO Jinxia, ZHANG Yimen, TANG Xiaoyan, et al. Extraction of channel carrier concentration using C-V method for SiC buried-channel MOSFET [J]. Acta Physica Sinica, 2006, 55(6): 2992-2996.

NEAMEN D A. Semiconductor physics and devices: basic principles [M]. 3rd ed. Boston, USA: McGraw-Hill, 2003.

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Sensitivity Analysis of Foil Geometrical Parameters for the Third-Generation CO2 Gas Foil Bearings Based on Design of Experiments Method

Study on Dynamic Characteristics Analysis of 350 MW-Scale Advanced Adiabatic Compressed Air Energy Storage System

Analysis of Flow Instability and Dynamic Characteristics in Water Wall of 350 MW Ultra-Flexible Boiler During Deep Peak-Shaving Operation

Analysis of the Impact of Helium-Xenon Mixture Ratio on the Dynamic Characteristics of the Brayton Cycle Systems

Dynamic characteristics analysis of 350 MW-scale advanced adiabatic compressed air energy storage system

Related Author

LI Jun

LI Zhigang

LI Zhuocong

HUA Lijun

FU Jianbo

ZHOU Manfu

ZHANG Wujun

HU Jun

Related Institution

Institute of Turbomachinery，Xi'an Jiaotong University

China Energy Engineering Group Yunnan Electric Power Design Institute Co., Ltd.

Yunnan Provincial Energy Investment Group Co., Ltd.

School of Energy and Power Engineering, Xi'an Jiaotong University

The National Key Laboratory of Low-Carbon Thermal Power Generation Technology and Equipment, Harbin Boiler Company Limited

⁰