Self-Heating Effect Model for Vacuum Gate Dielectric Field-Effect Transistors

doi:10.7652/xjtuxb202108011

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Self-Heating Effect Model for Vacuum Gate Dielectric Field-Effect Transistors

更新时间：2025-07-09

- Self-Heating Effect Model for Vacuum Gate Dielectric Field-Effect Transistors
- Vol. 55, Issue 8, Pages: 85-92(2021)
- 作者机构：
  
  西安石油大学机械工程学院,西安,710065
- 作者简介：
- 基金信息：
- DOI：10.7652/xjtuxb202108011
  CLC： TN386.1
- Online First：10 August 2021，
  
  Published：2021
- 稿件说明：
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Self-Heating Effect Model for Vacuum Gate Dielectric Field-Effect Transistors[J]. 2021, 55(8): 85-92.
DOI：

Self-Heating Effect Model for Vacuum Gate Dielectric Field-Effect Transistors[J]. 2021, 55(8): 85-92. DOI： 10.7652/xjtuxb202108011.

摘要

针对纳米尺度金属氧化物半导体场效应晶体管(MOSFET)热传输尺度效应对自热效应影响加剧的问题

提出一种考虑尺度影响的真空栅介质垂直堆叠硅纳米线(SiNWs)环栅场效应晶体管(GAA FET)自热效应模型。首先

分析硅薄膜与SiNWs内声子散射自由程之间的关系

量化用于衡量声子边界散射的SiNW热导率衰减因子; 然后

根据国际上现阶段关于纳米硅薄膜热导率的解析模型

推导得到考虑尺度效应影响的SiNW热导率解析模型; 最后

结合纳尺度器件热传输的关键路径

建立起考虑尺度影响的GAA SiNWs FET自热效应模型。在TCAD软件中采用所提自热效应模型实现了GAA SiNWs FET自热效应的数值计算。仿真结果表明:低热导率真空栅介质、垂直堆叠多热源与热传输尺度效应将导致真空栅介质GAA SiNWs FET热生成与扩散过程更加复杂

加剧器件自热效应; 通过真空栅介质间隙与环绕气体压强之间的折中设计能够最大化栅极热传输能力

达到抑制器件自热效应以改善器件性能及其可靠性的目的; 与传统自热效应模型估算的热点温度值相比

所提出的自热效应模型预测的真空栅器件内热点温度提高了30%

表明该自热效应模型能够有效的揭示GAA FET内SiNW热传输尺度效应对自热效应的影响机制。

Abstract

A self-heating effect model for vacuum gate dielectric vertical-stacked silicon nanowires(SiNWs)gate-all-around field-effect transistors(GAA FETs)considering scale effect is proposed to address intensified influences of thermal transport scale effect on self-heating effect in nanoscale MOSFETs. Firstly

the relationships between phonon scattering free paths in silicon film and SiNW are analyzed

and the SiNW thermal conductivity attenuation factor used to measure the revealing phonon boundary scattering is quantified. Then an analytical model of the thermal conductivity of SiNW considering the influence of scale effect is derived based on the current international analytical model for nanoscale silicon films. Finally

the self-heating effect model considering the scale effect is established for GAA SiNWs FET by combining with the critical path of heat transfer in nanoscale devices. The proposed model is used to realize numerical simulation of the self-heating effect of GAA SiNWs FET in TCAD software. Simulation results show that the vacuum gate dielectric with low thermal conductivity

vertical stacked multiple heat sources and thermal transport scale effect lead to more complex heat generation and diffusion processes in vacuum gate dielectric GAA SiNWs FET

and aggravate the self-heating effect of devices. The thermal transport capacity of gate can be maximized through the compromise design between vacuum gate gap and surrounding gas pressure and the self-heating effect of the device can be inhibited to improve the performance and reliability of device. Compared with the hot spot temperature estimated by the traditional self-heating effect model

the hot spot temperature in the vacuum gate device predicted by the proposed model increases by 30%

indicating that the proposed model can effectively reveal the thermal transport scale effect of SiNW in GAA FET.

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references

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