A Construction Method and Gas Sensitive Characteristics of Graphene Oxide Sensors

doi:10.7652/xjtuxb201810013

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A Construction Method and Gas Sensitive Characteristics of Graphene Oxide Sensors

更新时间：2025-07-09

- A Construction Method and Gas Sensitive Characteristics of Graphene Oxide Sensors
- Vol. 52, Issue 10, Pages: 95-101(2018)
- 作者机构：
  
  中国石化西北油田分公司石油工程技术研究院,乌鲁木齐,830011
- 作者简介：
- 基金信息：
- DOI：10.7652/xjtuxb201810013
  CLC： TN305.2
- Online First：10 October 2018，
  
  Published：2018
- 稿件说明：
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A Construction Method and Gas Sensitive Characteristics of Graphene Oxide Sensors[J]. 2018, 52(10): 95-101.
DOI：

A Construction Method and Gas Sensitive Characteristics of Graphene Oxide Sensors[J]. 2018, 52(10): 95-101. DOI： 10.7652/xjtuxb201810013.

摘要

采用紫外光与臭氧(UVO)法原位制备氧化石墨烯薄膜

以氧化石墨烯薄膜结合二端电子器件构造高性能气敏传感器。测试了氧化石墨烯气敏传感器对NH

的灵敏度、时间响应、选择性、保持率等特性

测试结果表明:由UVO法获得的氧化石墨烯气敏传感器的时间响应速度快、恢复性能好、稳定性强; UVO法的处理时间等工艺参数对氧化石墨烯气敏传感器的性能有很大影响

当处理时间为7 min时

氧化石墨烯气敏传感器对NH

的灵敏度达到最高值

功耗低(测试功率≤1 mW)且长期保持率好; 以丙酮和无水乙醇为对比气体

该传感器对NH

表现出明显的选择性。UVO法制备的氧化石墨烯比化学法制备对器件的污染更少

且可实现氧化石墨烯薄膜图形化工艺与集成电路制造工艺相兼容。

Abstract

Graphene oxide films are prepared in situ by the ultraviolet light and the ozone(UVO)method and then combined with a two-terminal electronic device to construct gas sensing sensors with high performance. The sensitivity

time response

selectivity and retention rate of the graphene oxide gas sensing sensor to NH

are tested. Results show that the graphene oxide gas sensing sensor obtained by the UVO method has fast response speed

good recovery performance and nigh stability. The processing parameters such as UVO treatment time have significant influences on the performance of the graphene oxide gas sensing sensor. When the time of UVO process is 7 min

the sensitivity of the graphene oxide gas sensing sensor to NH

reaches the maxi

mum

and power consumption is low(test power is less than 1 mW)and the long-term retention rate is nigh. The sensor shows obvious selectivity for NH

compared with acetone and absolute ethanol. Graphene oxide prepared by the UVO method has less pollution to devices than that by the chemical method. The patterning process of graphene oxide film is compatible with the integrated circuit manufacturing process.

关键词

Keywords

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