A High Electron Mobility Transistor of GaN Metal Oxide Semiconductor with 0.5 μm Gate Length Employing HfO<sub>2</sub> as Gate Dielectric

doi:10.7652/xjtuxb201708012

您当前的位置：

首页 >

文章列表页 >

A High Electron Mobility Transistor of GaN Metal Oxide Semiconductor with 0.5 μm Gate Length Employing HfO₂ as Gate Dielectric

更新时间：2025-07-09

- A High Electron Mobility Transistor of GaN Metal Oxide Semiconductor with 0.5 μm Gate Length Employing HfO₂ as Gate Dielectric
- Vol. 51, Issue 8, Pages: 72-76(2017)
- 作者机构：
  
  中国电子科技集团公司第五十五研究所,南京,210016
- 作者简介：
- 基金信息：
- DOI：10.7652/xjtuxb201708012
  CLC： TN305.2;TN325+.3
- Online First：10 August 2017，
  
  Published：2017
- 稿件说明：
移动端阅览
A High Electron Mobility Transistor of GaN Metal Oxide Semiconductor with 0.5 μm Gate Length Employing HfO₂ as Gate Dielectric[J]. 2017, 51(8): 72-76. DOI: 10.7652/xjtuxb201708012.
DOI：

A High Electron Mobility Transistor of GaN Metal Oxide Semiconductor with 0.5 μm Gate Length Employing HfO₂ as Gate Dielectric[J]. 2017, 51(8): 72-76. DOI: 10.7652/xjtuxb201708012. DOI：

摘要

为了抑制GaN高电子迁移率晶体管(HEMT)的栅极漏电

提出了一种0.5 μm栅长的GaN金属氧化物半导体(MOS)高电子迁移率晶体管结构。该结构采用势垒层部分挖槽

并用高介电常数绝缘栅介质的金属氧化物半导体栅结构替代传统GaN HEMT中的肖特基栅。基于此结构制备出一种GaN MOSHEMT器件

势垒层总厚度为20 nm

挖槽深度为15 nm

栅介质采用高介电常数的HfO

器件栅长为0.5 μm。对器件电流电压特性和射频特性的测试结果表明:所制备的GaN MOSHEMT器件最大电流线密度达到0.9 A/mm

开态源漏击穿电压达到75 V; 与GaN HEMT器件相比

其栅极电流被大大压制

正向栅压摆幅可提高10倍以上

并达到与同栅长GaN HEMT相当的射频特性。

Abstract

A high electron mobility transistor of GaN metal oxide semiconductor with 0.5 μm gate length(MOSHEMT)is proposed to suppress the gate leakage of GaN high electron mobility transistor(HEMT). A partially etched barrier structure is employed

and the structure of metal-oxide-semiconductor(MOS)gate with a high dielectric constant dielectric is used to replace the traditional GaN-HEMT Schottky gate. A GaN MOSHEMT is fabricated based on the proposed structure. The total thickness of the barrier layer is 20 nm

and the depth of the barrier trench is 15 nm. The gate dielectric uses the HfO

with high dielectric constant

and the gate length is 0.5 μm. Tests of current-v

oltage characteristic and radio frequency characteristic of the proposed device show that the maximum current density of the device is 900 A/mm

and the source-drain breakdown voltage is 75 V. A comparison with traditional GaN HEMTs shows that the GaN MOSHEMT greatly suppresses the gate current

its forward gate swing voltage is about ten times higher

and its radio frequency characteristic is comparable to that of the traditional GaN HEMTs with same gate length.

关键词

Keywords

references

任春江, 王泉慧, 刘海琪, 等. 0.5 μm AlGaN/GaN HEMT及其应用 [J]. 固体电子学研究与进展, 2011, 31(5): 433-437.

REN Chunjiang, WANG Quanhui, LIU Haiqi, et al. 0.5 μm AlGaN/GaN HEMT and its application [J]. Research & Progress of Solid State Electronics, 2011, 31(5): 433-437.

陶洪琪, 张斌, 余旭明. X波段60W高效率GaN HEMT功率MMIC [J]. 固体电子学研究与进展, 2016, 36(4): 270-273.

TAO Hongqi, ZHANG Bin, YU Xuming. 60W high efficiency X-band GaN HEMT power amplifier MMIC [J]. Research Progress of Solid State Electronics, 2016, 36(4): 270-273.

任春江, 陶洪琪, 余旭明, 等. 0.15 μm GaN HEMT及其应用 [J]. 固体电子学研究与进展, 2013, 33(3): 215-219.

REN Chunjiang, TAO Hongqi, YU Xuming, et al. 0.15 μm GaN HEMT and its application [J]. Research Progress of Solid State Electronics, 2013, 33(3): 215-219.

PEARTON S J, ABERNATHY C R. Gallium nitride processing for electronics, sensors and spintronics [M]. Berlin, Germany: Springer, 2006: 313.

IM K S, HA J B, KIM K W, et al. AlGaN/GaN-based normally-off GaN MOSFET with stress controlled 2DEG source and drain [J]. Physica Status Solidi, 2010, 7(7/8): 2013-2015.

XU Zhe, WANG Jinyan, CAI Yong, et al. Enhancement mode(E-Mode)AlGaN/GaN MOSFET with 10-13 A/mm leakage current and 1012 ON/OFF current ratio [J]. IEEE Electron Device Letters, 2014, 35(12): 1200-1202.

HUANG T, ZHU X, LAU K M. Enhancement-mode AlN/GaN MOSHEMTs fabricated by selective area regrowth of AlGaN barrier layer [C]∥2013 25th International Symposium on Power Semiconductor Devices Ics. Piscataway, NJ, USA: IEEE, 2013: 199-202.

TURUVEKERE S, DASGUPTA A, DASGUPTA N. Effect of barrier layer thickness on gate leakage current in AlGaN/GaN HEMTs [J]. IEEE Transactions on Electron Devices, 2015, 62(10): 3449-3452.

QUAY R. Gallium nitride electronics [M]. Berlin, Germany: Springer, 2008: 155.

JOH J, ALAMO J A D. A current-transient methodology for trap analysis for GaN high electron mobility transistors [J]. IEEE Transactions on Electron Devices, 2011, 58(1): 132-140.[11] YOON Y J, SEO J H, MIN S C, et al. TMAH-based wet surface pre-treatment for reduction of leakage current in AlGaN/GaN MIS-HEMTs [J]. Solid-State Electronics, 2016, 124: 54-57.

REZAZADEH V G. Plasma-enhanced ALD for improved MOS interfaces in III-V semiconductors [C]∥31st Annual International Conference on Compound Semiconductor Manufacturing Technology. Beaverton, Oregon, USA: CS ManTech, 2016: 97-100.

HUA Mengyuan, LIU Cheng, YANG Shu, et al. Characterization of leakage and reliability of SiNx gate dielectric by low pressure chemical vapor deposition for GaN-based MIS-HEMTs [J]. IEEE Transactions on Electron Devices, 2015, 62(10): 3215-3221.

YANG Zhishu, TANG Zhikai, WONG K Y, et al. High quality interface in Al2O3/GaN/AlGaN/GaN MIS structures with in-situ pre-gate plasma nitridation [J]. IEEE Election Device Letters, 2013, 34(12): 1497-1499.

王冲, 马晓华, 冯倩, 等. 槽栅MOSHEMT研制与特性分析 [J]. 半导体学报, 2009, 30(5): 054002.

WANG Chong, MA Xiaohua, FENG Qian, et al. Development and characteristics analysis of recessed-gate MOSHEMT [J]. Journal of Semiconductors, 2009, 30(5): 054002.

YUE Yuanzheng, HAO Yue, FENG Qian, et al. GaN MOS-HEMT using ultra-thin Al2O3 dielectric grown by atomic layer deposition [J]. Chinese Physics Letters, 2007, 52(8): 2419-2422.

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Sensitivity Analysis of Foil Geometrical Parameters for the Third-Generation CO2 Gas Foil Bearings Based on Design of Experiments Method

A Structure-Semantics-Residual Collaborative Image Compression Framework：Towards Privacy Protection and High-Fidelity Reconstruction

A Fast Calculation Method for Thermal Flow Fields in Transformer Windings Based on PI-DeepONet

Turbulent Kinetic Energy Dissipation Mechanism of Supercritical Carbon Dioxide Leakage Flow in a Scallop Bionic Seal Cavity

Review of the Application of EBSILON Software in Combined Heat and Power System Optimization

Related Author

No data

Related Institution

No data

⁰

A High Electron Mobility Transistor of GaN Metal Oxide Semiconductor with 0.5 μm Gate Length Employing HfO2 as Gate Dielectric

DOI：10.7652/xjtuxb201708012

摘要

Abstract

关键词

Keywords

references

A High Electron Mobility Transistor of GaN Metal Oxide Semiconductor with 0.5 μm Gate Length Employing HfO₂ as Gate Dielectric