A Low-Voltage All-Metal Oxide Semiconductor Voltage Reference with Ultra-Low Power

doi:10.7652/xjtuxb201708008

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A Low-Voltage All-Metal Oxide Semiconductor Voltage Reference with Ultra-Low Power

更新时间：2025-07-09

- A Low-Voltage All-Metal Oxide Semiconductor Voltage Reference with Ultra-Low Power
- Vol. 51, Issue 8, Pages: 47-52+76(2017)
- 作者机构：
  
  西安交通大学微电子学院,西安,710049
- 作者简介：
- 基金信息：
- DOI：10.7652/xjtuxb201708008
  CLC： TN432
- Online First：10 August 2017，
  
  Published：2017
- 稿件说明：
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A Low-Voltage All-Metal Oxide Semiconductor Voltage Reference with Ultra-Low Power[J]. 2017, 51(8): 47-52+76.
DOI：

A Low-Voltage All-Metal Oxide Semiconductor Voltage Reference with Ultra-Low Power[J]. 2017, 51(8): 47-52+76. DOI： 10.7652/xjtuxb201708008.

摘要

针对传统带隙基准电源电压高、功耗高和面积大的问题

提出了一种超低功耗的低电压全金属氧化物半导体(MOS)基准电压源。该基准源通过电压钳制使MOS管工作在深亚阈值区

利用亚阈值区MOS管的阈值电压差补偿热电势的温度特性

同时采用负反馈提高了电压源的线性度与电源抑制比。整个电压源电路采用SMIC 0.18 μm互补金属氧化物半导体工艺设计

仿真结果表明:基准电压源的电源电压范围可达0.5～3.3 V

线性调整率为0.428%V

-1

功耗最低仅为0.41 nW; 在1.8 V电源电压、-40～125 ℃温度范围内

温度系数为4.53×10

-6

℃

-1

输出电压为230 mV; 1 kHz下电源抑制比为-60 dB

芯片版图面积为625 μm

。该基准电压源可满足植入式医疗、可穿戴设备和物联网等系统对芯片的低压低功耗要求。

Abstract

A low-voltage all-metal oxide semiconductor(MOS)voltage reference with ultra-low power is presented to solve the problems of high supply voltage

high power consumption and large chip area in conventional band-gap references. The reference enforces all transistors to operate in the deep sub-threshold region through a voltage clamping technique

and the reference voltage is obtained by compensating the temperature characteristic of the thermal voltage with the difference of threshold voltages between two MOS transistors in sub-threshold region. Meanwhile

the linearity of the voltage reference and power supply rejection ratio are enhanced via negative feedback in the circuit

which is designed using the S

MIC 0.18 μm complementary metal oxide semiconductor process. Simulation results show that the reference circuit is able to operate within 0.5-3.3 V voltage range of power supply with a linear regulation of 0.428%V

-1

and the lowest power consumption is merely 0.41 nW. When the power supply voltage is 1.8 V in a temperature range from -40 to 125 ℃

the temperature coefficient is 4.53×10

-6

℃

-1

the output voltage of the reference is 230 mV

and the power supply rejection ratio is -60 dB at 1 kHz frequency

while the layout area of the core circuit is only 625 μm

. The voltage reference can be used in the systems that require low voltage and low power consumption

such as implantable medical devices

wearable devices

and Internet of Things

etc.

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Keywords

references

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