Finite Element Analysis on Wafer Micro-Crack Damage Depth of SiC Crystal in Wire Saw Slicing Process

doi:10.7652/xjtuxb201612008

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Finite Element Analysis on Wafer Micro-Crack Damage Depth of SiC Crystal in Wire Saw Slicing Process

更新时间：2025-07-09

- Finite Element Analysis on Wafer Micro-Crack Damage Depth of SiC Crystal in Wire Saw Slicing Process
- Vol. 50, Issue 12, Pages: 45-50(2016)
- 作者机构：
  
  山东大学机械工程学院,济南,250061
- 作者简介：
- 基金信息：
- DOI：10.7652/xjtuxb201612008
  CLC： TN304.0
- Online First：10 December 2016，
  
  Published：2016
- 稿件说明：
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Finite Element Analysis on Wafer Micro-Crack Damage Depth of SiC Crystal in Wire Saw Slicing Process[J]. 2016, 50(12): 45-50.
DOI：

Finite Element Analysis on Wafer Micro-Crack Damage Depth of SiC Crystal in Wire Saw Slicing Process[J]. 2016, 50(12): 45-50. DOI： 10.7652/xjtuxb201612008.

摘要

为了实现对碳化硅单晶(SiC)线锯切片亚表面微裂纹损伤深度快速计算与非破坏性分析

基于SiC单晶锯切加工脆性模式的材料去除机理

选择材料脆性开裂本构模型

建立了SiC单晶线锯切片微裂纹损伤深度计算有限元模型。模型通过定义开裂状态量的输出

控制晶片表面单元失效与删除

将晶片上计算点区域内未失效单元节点到晶片表面最大距离提取为微裂纹损伤深度

实现了微裂纹损伤深度的仿真计算。研究了锯切过程的最大主应力与应力变化率的变化规律

仿真计算了切片微裂纹损伤深度

结果表明:锯切过程中距切点越近

最大主应力值与应力变化率越大; 当工件进给速度一定时

锯丝速度提高

SiC晶片的微裂纹损伤深度降低; 有限元模型的仿真计算值均小于实验测量值

结果变化趋势较一致

其相对误差范围为10%～15.92%。建立的有限元模型可以较准确地预测计算SiC单晶线锯切片微裂纹损伤深度。

Abstract

To realize the nondestructive analysis and fast calculation for subsurface micro-crack damage(SSD)depth of single-crystal silicon carbide(SiC)wafer in wire saw slicing process

a finite element model for analyzing SiC wafer SSD depth is established based on brittle material removal mechanism of wire sawing SiC single crystal. The failure and removal of wafer surface finite element units are controlled by defining the output of the cracking state

and the maximum distance from the non-failure nodes in calculation points region to the wafer surface is considered the micro-crack damage depth. The maximum principal stress and its change rate are revealed

and the SSD depth is obtained with the finite element model. The results show that the maximum principal stress and its change rate become greater as getting closer to the sawing area; the SSD depth of SiC wafer decreases with the increasing wire speed at constant ingot feed rate. The finite element simulation values are lower than the experimental ones with a consistent change trend and a relative error range of 10%-15.92%

which means the finite element model can be used to predict the micro-crack damage depth of SiC wafer in wire sawing process.

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references

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