

浏览全部资源
扫码关注微信
西安交通大学电子与信息工程学院,西安,710049
Online First:10 October 2014,
Published:2014
移动端阅览
Latest Advance of Researches on Graphene Transistors[J]. 2014, 48(10): 1-8+48.
Latest Advance of Researches on Graphene Transistors[J]. 2014, 48(10): 1-8+48. DOI: 10.7652/xjtuxb201410001.
针对集成电路的特征尺寸小于10 nm以下所面临的短沟道效应、隧道效应和制造工艺限制困难引发的研究热点——石墨烯能否替代硅
着重从数字晶体管、射频晶体管和柔性透明晶体管3个方面概括和分析了新型石墨烯晶体管的发展现状。分析认为:石墨烯平行纳米带阵列结构和异质结结构有望打开石墨烯禁带以实现大的电流开关比
将是石墨烯数字晶体管的研究热点; 通过降低接触电阻、接入电阻以及衬底、栅介质的匹配来提高截止频率和最大振荡频率将是石墨烯射频晶体管的主要发展趋势; 基于聚对苯二甲酸乙二醇酯(PET)衬底和离子凝胶栅介质的柔性制造技术
最有希望在保证石墨烯高迁移率的基础之上实现全石墨烯透明柔性电路
使石墨烯晶体管得以实用
必将对集成电路行业产生巨大影响。
According to the research hotspot arised by the difficulties that when the feature sizes of integrated circuits become less than 10 nm
the silicon ICs are unlikely stable due to the short channel effect
tunneling effect and manufacturing process limits
the latest advance of researches on graphene transistors are discussed from three aspects including digital transistors
radio frequency(RF)transistors and flexible transparent transistors. Graphene nanoribbons array parallel structure and heterogeneous structure are the most promising approaches on opening the graphene band gap to achieve a high on/off current ratio and to achieve complementary logic. The main development trend of graphene RF transistors is to improve the cut-off frequency and maximum oscillating frequency by reducing the contact resistance and access resistance
and matching the interface between substrate and gate dielectric. It is realized that the flexible manufacturing technology of Polythylene terephthalate(PET)substrate and Ion Gel gate dielectric are the most promising approaches to achieve a full graphene transparent flexible circuit and to keep graphene high mobility. Graphene transistors will have a huge impact on the integrated circuit industry.
IEONG M, DORIS B, KEDZIEJAKUB J, et al. Silicon device scaling to the sub-10-nm regime[J]. Science, 2004, 306: 2057-2060.
PONOMARENKO L A, SCHEDIN F, KATSNELSON M I, et al. Chaotic dirac billiard in graphene quantum dots[J]. Science, 2008, 320: 356-358.
SCHWIERZ F. Graphene transistors[J]. Nature Nanotechnology, 2010, 5: 487-496.
BALANDIN A A, GHOSH S, BAO W, et al. Superior thermal conductivity of single-layer graphene[J]. Nano Letters, 2008, 8(3): 902-907.
LI X, WANG X, ZHANG L, et al. Chemically derived, ultrasmooth graphene nanoribbon semiconductors[J]. Science, 2008, 319: 1229-1231.
BAI J, ZHONG X, JIANG S, et al. Graphene nanomesh[J]. Nature Nanotechnology, 2010, 5: 190-194.
CAI J, RUFFIEUX P, JAAFARFAR R, et al. Atomically precise bottom-up fabrication of graphene nanoribbons[J]. Nature Letters, 2010, 466: 470-473.
ZENG Z, HUANG X, YIN Z, et al. Fabrication of graphene nanomesh by using an anodic aluminum oxide membrane as a template[J]. Advanced Materials, 2012, 24(30): 4138-4142.
YANG Y, MURALI R. Impact of size effect on graphene nanoribbon transport[J]. IEEE Electron Device Letters, 31(3): 237-239.
MOON J S, SEO H, STRATAN F, et al. Lateral graphene heterostructure field-effect transistor[J]. IEEE Electron Device Letters, 2013, 34(9): 1190-1192.
BRITNELL L, GORBACHEV R V, JALIL R, et al. Field-effect tunneling transistor based on vertical graphene heterostructures[J]. Science, 2012, 335: 947-950.
GEORGIOU T, JALIL R, BELLE B D, et al. Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics[J]. Nature Nanotechnology, 2013, 8: 100-103.
LIU Z, MA L, SHI G, et al. In-plane heterostructures of graphene and hexagonal boron nitride with controlled domain sizes[J]. Nature Nanotechnology, 2013, 8: 119-124.
GUO B, LIU Q, CHEN E, et al. Controllable N-doping of graphene[J]. Nano Letters, 2010, 10(12): 4975-4980.
WANG X, LI X, ZHANG L, et al. N-doping of graphene through electrothermal reactions with ammonia[J]. Science, 2009, 324: 768-771.
KIM H H, YANG J W, JO S B, et al. Substrate-induced solvent intercalation for stable graphene doping[J]. ACS Nano, 2013, 7(2): 1155-1162.
TANG Y B, YIN L C, YANG Y, et al. Tunable band gaps and p-type transport properties of boron-doped graphenes by controllable ion doping using reactive microwave plasma[J]. ACS Nano, 2012, 6(3): 1970-1978.
PANCHAKARLA L S, SUBRAHMANYAM K S, SAHA S K, et al. Synthesis, structure, and properties of boron- and nitrogen-doped graphene[J]. Advanced Materidals, 2009, 21: 4726-4730.
WANG L, MERIC I, HUANG P Y, et al. One-dimensional electrical contact to a two-dimensional material[J]. Science, 2013, 342: 614-617.
LI W, LIANG Y, YU D, et al. Ultraviolet/ozone treatment to reduce metal-graphene contact resistance[J]. Applied Physics Letters, 2013, 102: 183110.
MATSUDA Y, DENG W Q, GODDARD W A, et al. Contact resistance for “end-contacted” metal-graphene and metal-nanotube interfaces from quantum mechanics[J]. The Journal of Physical Chemistry: C, 2010, 114: 17845-17850.
SMITH J T, FRANKLIN A D, FARMER D B, et al. Reducing contact resistance in graphene devices through contact area patterning[J]. ACS Nano, 2013, 7(4): 3661-3667.
JUNG M H, PARK G H, YOSHIDA T, et al. High-performance graphene field-effect transistors with extremely small access length using self-aligned source and drain technique[J]. Proceedings of IEEE, 2013, 101(7): 1603-1608.
MOVVA H C P, RAM M E, CORBET C M, et al. Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions[J]. Applied Physics Letters, 2012, 101: 183113.
AL-AMIN C, VABBINA P K, KARABIYIK M, et al. Improving high-frequency characteristics of graphene FETs by field-controlling electrodes[J]. IEEE Electron Device Letters, 2013, 34(9): 1193-1195.
LIAO L, LIN Y C, BAO M, et al. High-speed graphene transistors with a self-aligned nanowire gate[J]. Nature, 2010, 467: 305-308.
DEAN C R, YOUNG A F, MERIC I, et al. Boron nitride substrates for high-quality graphene electronics[J]. Nature Nanotechnology, 2010, 5: 722-726.
YAN C, CHO J H, AHN J H. Graphene-based flexible and stretchable thin film transistors[J]. Nanoscale, 2012, 4: 4870-4882.
KIM B J, LEE S K, KANG M S, et al. Coplanar-gate transparent graphene transistors and inverters on plastic[J]. ACS Nano, 2012, 6(10): 8646-8651.
KIM B J, JANG H, LEE S K, et al. High-performance flexible graphene field effect transistors with ion gel gate dielectrics[J]. Nano Letters, 2010, 10: 3464-3466.
ZHANG D B, SEIFERT G, CHANG K, et al. Strain-induced pseudomagnetic fields in twisted graphene nanoribbons[J]. Physical Review Letters, 2014, 112: 096805.
LEE S, JO G, KANG S, et al. Enhanced charge injection in pentacene field-effect transistors with graphene electrodes[J]. Advanced Materials, 2011, 23: 100-105.
LEE S K, JANG H Y, JANG S, et al. All graphene-based thin film transistors on flexible plastic substrates[J]. Nano Letters, 2012, 12: 3472-3476.
PARK J U, NAM S W, LEE M S, et al. Synthesis of monolithic graphene-graphite integrated electronics[J]. Nature Materials, 2012, 11: 120-125.
0
Views
4
下载量
3
CSCD
Publicity Resources
Related Articles
Related Author
Related Institution
京公网安备11010802024621