CdS/ SiO2 Nanowire Arrays and CdS Nanobelts Synthesi-ed by Thermal Evaporation

doi:10.7652/xjtuxb200601018

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CdS/ SiO2 Nanowire Arrays and CdS Nanobelts Synthesi-ed by Thermal Evaporation

更新时间：2025-07-09

- CdS/ SiO2 Nanowire Arrays and CdS Nanobelts Synthesi-ed by Thermal Evaporation
- Vol. 40, Issue 1, Pages: 75-0078(2006)
- 作者机构：
  
  西安工业学院材料与化工学院,西安,710032
- 作者简介：
- 基金信息：
- DOI：10.7652/xjtuxb200601018
  CLC： TN383
- Online First：10 January 2006，
  
  Published：2006
- 稿件说明：
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CdS/ SiO2 Nanowire Arrays and CdS Nanobelts Synthesi-ed by Thermal Evaporation

[J]. 2006, 40(1): 75-0078. DOI: 10.7652/xjtuxb200601018.
DOI：

CdS/ SiO2 Nanowire Arrays and CdS Nanobelts Synthesi-ed by Thermal Evaporation

[J]. 2006, 40(1): 75-0078. DOI: 10.7652/xjtuxb200601018. DOI：

摘要

利用物理热蒸发法蒸发CdS 和CdO 的混合粉末

Si 衬底表面发生了选择性刻蚀

并由此制 备出CdS/ SiO2 纳米线阵列和CdS 纳米带. 研究了CdS/ SiO2 纳米线阵列的形成原因和CdS 纳米带 的生长过程

结果表明: CdS 枝晶的生长对CdS/ SiO2 纳米线阵列的形成起到了非常重要的作 用;CdS/ SiO2纳米线阵列的形成符合“纳米电化学自组织机制”;CdS 纳米带的生长过程为气O固过 程.

Abstract

CdS/ SiO2 nanowire arrays and CdS nanobelt s were synt hesi-ed by t hermal evaporation of CdS and CdO mixt ure powders

and highly selective etching occurred on the surfaces of silicon subst rate. The growth mechanism of CdS/ SiO2 nanowire arrays and t he growt h process of CdS nanobelt s were st udied. The result s show t hat the growt h of CdS dendrites plays an important role in t he formation of CdS/ SiO2 nanowire arrays ; t he formation of CdS/ SiO2 nanowire arrays complies wit h t he self2assembling nanoelect rochemist ry mechanism ; and t he growth of CdS nano2 belt s relies on a vapor2solid t ransformation.

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