A new fabrication method for hollow microneedle array is proposed with three times exposures in deep X-ray lithography of synchrotron radiation and the development procedure. The lateral and slant propagation of the dissolution front in development procedure is realized via the exposure without any mask
and the shape of needle tip can be obtained. The beam of the synchrotron radiation light source is an approximate elliptic Gaussian beam
which results in that the section of microneedle is elliptic and the strength of microneedle in all directions is not uniform. A method of orthogonal double exposure is adopted to compensate the beam asymmetry of synchrotron radiation light source. The process of this fabrication method includes relatively few steps without special apparatuses. All experiments are carried out at the beam-line 13 of synchrotron radiation light source of the superconducting compact storage ring AURORA in Ritsumeikan University of Japan. The experimental results show that the high quality hollow microneedles can be fabricated simply by this method to meet the requirements of mass production of microneedle array with low cost.
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