Nanomechanical Properties of Passivation Thin Films in Integrated Circuit

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Nanomechanical Properties of Passivation Thin Films in Integrated Circuit

更新时间：2025-07-09

- Nanomechanical Properties of Passivation Thin Films in Integrated Circuit
- Vol. 42, Issue 11, Pages: 1345-1349(2008)
- 作者机构：
  
  复旦大学材料科学系,上海,200433
- 作者简介：
- 基金信息：
- DOI：
  CLC： TB3
- Online First：10 November 2008，
  
  Published：2008
- 稿件说明：
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Nanomechanical Properties of Passivation Thin Films in Integrated Circuit[J]. 2008, 42(11): 1345-1349.
DOI：

Nanomechanical Properties of Passivation Thin Films in Integrated Circuit[J]. 2008, 42(11): 1345-1349. DOI：

摘要

利用等离子体增强化学气相淀积工艺在p型单晶硅(111)衬底上制备了厚度为70、150、450 nm的SiO

薄膜和100、170、220 nm的Si

薄膜

并使用纳米压入仪对薄膜进行了纳米力学测试与分析.薄膜在不同载荷下的硬度和弹性模量计算采用Oliver-Pharr方法.在测量两种薄膜的硬度时没有发现压痕尺寸效应.SiO

薄膜的弹性模量与压入深度的依赖关系不明显

但与薄膜厚度的依赖关系较明显

薄膜厚度的增加将导致弹性模量显著减小

而Si

的弹性模量与薄膜厚度的依赖关系不明显

但与压入深度的依赖关系较明显

会随着压入深度的增加而逐渐增加到某一定值.

Abstract

In the experiment herein

both SiO

thin films and Si

thin films were deposited by plasma enhanced chemical vapor deposition(PECVD)on p-type silicon(111)substrate. The film thickness got to 70

150

450 nm for SiO

and 100

170

220 nm for Si

respectively. A nanohardness tester was then used to conduct nanomechanical characterization on those SiO

and Si

thin films. Oliver-Pharr method was adopted in the calculation of hardness and elastic modulus of those thin films under varied loads. Hardness of SiO

and Si

films shows no indentation size effect. Elastic modulus of SiO

films does not vary much

with indentation depth

but shows film thickness dependence

decreasing with the increase in film thickness. Elastic modulus of Si

films depends less on film thickness

but more on indentation depth

increasing to a constant value with the increase in indentation depth.

关键词

Keywords

references

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