A novel method considering nonlinear conduction mechanism is proposed to calculate the passive intermodulation(PIM)at waveguide connection and to deal with the prediction difficulty of PIM under high power condition. By taking the fact into account that the surface of the waveguide is always rough and that there is usually a dielectric thin film on it
the waveguide connection is regarded as a metal-insulator-metal structure
and the rough surface contact model and the equivalent circuit model are given. Then
the quantum tunneling current and the thermionic emission current are assumed to be the main nonlinear sources of PIM across the real waveguide connection
and the PIM power levels are obtained with the aid of the Fourier Transformation. Compared with the conventional power series me
thod
the proposed method can compute any order of PIM rapidly without parameter fitting. Simulations on rectangular aluminum waveguide operating at TE
10
mode are performed. The results show that the PIM power have a lower level under heavier contact pressure; higher order PIM power have more dependence on the power ratio of the input power; and the growth rates for 5-
7-
9- order PIMs power are all about 2
which is more realistic than the theoretical results from the classic power series method.
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references
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