Design and Modeling of Multi-Layer Planar Inductor for Fully Integrated DC/DC Converters on Silicon Substrate

李清华; 邵志标; 耿莉

您当前的位置：

首页 >

文章列表页 >

Design and Modeling of Multi-Layer Planar Inductor for Fully Integrated DC/DC Converters on Silicon Substrate

更新时间：2025-12-08

- Design and Modeling of Multi-Layer Planar Inductor for Fully Integrated DC/DC Converters on Silicon Substrate
- Vol. 41, Issue 4, Pages: 463-466(2007)
- 作者机构：
  
  西安交通大学电子与信息工程学院,西安,710049
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN4
- Online First：10 April 2007，
  
  Published：2007
- 稿件说明：
移动端阅览
李清华, 邵志标, 耿莉. Design and Modeling of Multi-Layer Planar Inductor for Fully Integrated DC/DC Converters on Silicon Substrate[J]. 2007, 41(4): 463-466.
DOI：

李清华, 邵志标, 耿莉. Design and Modeling of Multi-Layer Planar Inductor for Fully Integrated DC/DC Converters on Silicon Substrate[J]. 2007, 41(4): 463-466. DOI：

摘要

为提高完全集成低压低功率DC/DC转换器转换效率与输出电流能力

提出了一种多层混联螺旋电感结构.该结构基于标准0.5 μm 2P3M CMOS工艺

将下面较薄的两层金属线圈多点并联

再与最上层金属线圈串联.多点并联结构有效地增加了等效金属层的厚度

串联结构增加了线圈之间的互感值

从而可以在不增加额外工艺成本的条件下显著提高平面电感的品质因数、单位面积电感值和电感线圈的电流承受能力.所提出的模型为完全集成DC/DC转换器的整体电路模拟分析提供了便利基础.基于0.5 μm 2P3M CMOS硅衬底工艺的模拟计算结果表明

在DC/DC转换器工作频段50～400 MHz

取得了预期电感的设计效果

最大品质因数值达4.2

单位面积电感值达到83 mH/m

可以承受的电流达90 mA.电感芯片测试结果与模型模拟结果基本吻合.

Abstract

In order to improve the conversion efficiency and output current carrying capability of the fully integrated low voltage and low power DC/DC converters

a series parallel multi-layer spiral inductor based on standard 0.5 μm 2P3M CMOS technology was proposed. The paralleled metals contacted by vias array increased the effective metal thickness and the series metals increased the mutual inductance between the layers. Therefore

the quality factor

the inductance in unit area and the current handling capability of the series parallel inductors were observably improved without extra technology. The developed model provides whole circuit analog analysis of fully integrated DC/CD converters with convenient basis. Closed form expressions of lumped parameters were obtained and verified with 0.5 μm CMOS silicon technology. Experiment results show that the maximum quality factor is 4.2

the inductance in unit area is 83 nH per square millimeter

and the handled current is 90 mA. The model agrees well with measurements in the interesting frequency band

from 50 MHz to 400 MHz.

关键词

Keywords

references

Musunuri S, Chapman P L, Zou J, et al.Design issues for monolithic DC-DC converters [J]. IEEE Transactions on Power Electronics,2005,20(3): 639-649.

Lee J, Hatcher G, Vandenbergh L, et al.Evaluation of fully-integrated switching regulators for CMOS process technologies [C]∥International Symposium on System-on-Chip. Piscataway, USA: IEEE,2003:155-158.

Erickson R W, Maksimovic D. Fundamentals of power electronics [M]. 2nd ed.Norvell:Kluwer Academic Publishers,2001:15-27.

Li Qinghua, Geng Li, Shao Zhibiao.Optimum double-layer spiral inductor on silicon substrate designed for monolithic buck converters [C]∥Proc of 17th Asia-Pacific Microwave Conference.Piscataway, USA: IEEE, 2005:2156-2159.

CSMC Technology Corporation. 6S05DPTM-ST[S/OL].[2006-02-27].http:∥www.csmc.com.cn/ca/Doucument_download1.asp.

Mohan S S, Hershenson M M, Boyd S P, et al.Simple accurate expressions for planar spiral inductances [J].IEEE Journal of Solid-State Circuits,1999,34(10):1419-1424.

Greenhouse H M. Design of planar rectangular microelectronic inductors [J]. IEEE Transactions on Parts, Hybrids, and Packaging, 1974, 10(2):101-109.

Grover F W.Inductance calculations [M].New York:D. Van Nostrand Company, Inc., 1946:31-47.

Long J R,Copeland M A.The modeling,characterization,and design of monolithic inductors for silicon RF IC's [J].IEEE Journal of Solid-State Circuits,1997,32(3):357-369.

Zolfaghari A,Chan A,Razavi B.Stacked inductors and transformers in CMOS technology [J].IEEE Journal of Solid-State Circuits,2001,36(4):620-628.

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Global Optimization Method of the Design for Multi-Layer Planar Inductors

Modeling Method for Position Control of Full Digital AC Servo Systems

Synchronous Control System Modeling of Gantry-Type Machine Tools

Modeling for Three-Phase Switched Reluctance Starter/Generator System

Formal Model of Machining Capacity for a Machining System

Related Author

孙挪刚 1

梅雪松 1

陶涛 1

栾宗涛 1

杨清宇 2

张俊 1

程瑶 1

Related Institution

School of Mechanical Engineering, Xi'an Jiaotong University

State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University

School of Electrical Engineering, Xi'an Jiaotong University

State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University

School of Electrical and Information Engineering, Tianjin University

⁰