Numerical Simulation of Chemical Vapor Deposition Process for Fabrication of SiC Coating

孙国栋; 李贺军; 付前刚; 曹伟; 宋广兴

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Numerical Simulation of Chemical Vapor Deposition Process for Fabrication of SiC Coating

更新时间：2025-12-08

- Numerical Simulation of Chemical Vapor Deposition Process for Fabrication of SiC Coating
- Vol. 41, Issue 9, Pages: 1070-1074(2007)
- 作者机构：
  
  西北工业大学碳/碳复合材料工程技术研究中心,西安,710072
- 作者简介：
- 基金信息：
- DOI：
  CLC： TB332
- Online First：10 September 2007，
  
  Published：2007
- 稿件说明：
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孙国栋, 李贺军, 付前刚, et al. Numerical Simulation of Chemical Vapor Deposition Process for Fabrication of SiC Coating[J]. 2007, 41(9): 1070-1074.
DOI：

孙国栋, 李贺军, 付前刚, et al. Numerical Simulation of Chemical Vapor Deposition Process for Fabrication of SiC Coating[J]. 2007, 41(9): 1070-1074. DOI：

摘要

根据化学气相沉积法的工艺特点

对C/C复合材料SiC涂层的制备过程进行了数学建模和有限元模拟

得出了反应器内以及试样表面反应物浓度的变化规律

并且获得了反应器内反应物浓度与沉积产物间的关系.结合实验分析

验证了SiC涂层晶粒尺寸的变化和沉积形貌的演变是由于反应气体浓度分布随位置变化造成的:沿着反应气体流动的方向

反应物浓度逐渐降低

沉积得到的SiC晶粒尺寸逐渐减小

沉积形貌由堆积岛状到颗粒状再到晶须状逐级演变.

Abstract

A mathematical model for depicting chemical vapor deposition process to fabricate SiC coating on carbon/carbon composites was developed. The concentration field of the reactive gases in reactor and the concentration distribution of reactive gases on the surface of sample were simulated with the finite element analysis. Combined with the experimental results

it is validated that along the flow direction of the reactive gases

the dimension of the as-deposited SiC crystal diminishes gradually with the concentration of the reactive gases decreasing

and the microstructure of the SiC crystal evolves from island to grain

and then to whisker.

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references

Fu Qiangang, Li Hejun, Li Kezhi, et al. Current topics in materials science [M]. New York: North-Holland, 1978: 91.

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