Effect of Sputtering Power Density on Properties of Ga-Doped ZnO Thin Films Grown by Radio Frequency Sputtering

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Effect of Sputtering Power Density on Properties of Ga-Doped ZnO Thin Films Grown by Radio Frequency Sputtering

更新时间：2025-07-09

- Effect of Sputtering Power Density on Properties of Ga-Doped ZnO Thin Films Grown by Radio Frequency Sputtering
- Vol. 44, Issue 8, Pages: 58-62(2010)
- 作者机构：
  
  西安交通大学电子物理与器件教育部重点实验室,西安,710049
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN304.2
- Online First：10 August 2010，
  
  Published：2010
- 稿件说明：
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Effect of Sputtering Power Density on Properties of Ga-Doped ZnO Thin Films Grown by Radio Frequency Sputtering[J]. 2010, 44(8): 58-62.
DOI：

Effect of Sputtering Power Density on Properties of Ga-Doped ZnO Thin Films Grown by Radio Frequency Sputtering[J]. 2010, 44(8): 58-62. DOI：

摘要

室温下利用射频磁控溅射法在石英玻璃衬底上制备了掺Ga氧化锌(Ga:ZnO)多晶透明导电薄膜.通过改变磁控溅射生长过程中的溅射功率密度和靶基距

研究了多晶薄膜的透明导电性能与生长参数的相互影响关系.研究结果表明:当溅射时间相同时

随溅射功率密度的增加和靶基距的减小

Ga:ZnO薄膜的厚度增加

从而导致了薄膜导电率升高; 当溅射功率密度为5.3 W/cm

、靶基距为5 cm时

Ga:ZnO薄膜的最小电阻率达到3.1×10

-4

Ω ·cm.透光率测试结果表明:当溅射功率密度增加时

Ga:ZnO薄膜中紫外光学吸收发生了红移; 增加溅射功率密度会造成薄膜中掺杂缺陷密度增加

产生禁带之间Urbach带尾能级吸收效应; GaZnO薄膜在可见光范围中的平均透光率大于80%.

Abstract

Polycrystalline Ga-doped ZnO(Ga:ZnO)thin films are deposited on quartz glass substrates at room temperature by using radio frequency magnetron sputtering. The correlation between the growth conditions and Ga:ZnO film properties is studied through modulation of sputtering power density and target-to-substrate distance. It is found that the conductivity of Ga:ZnO films increases with increasing of power density and decreasing of target-to-substrate distance. The lowest conductivity of Ga:ZnO films is 3.1×10

-4

Ω·cm grown when the power density is 5.3 W/cm

and the target-to-substrate distance is 5 cm. The red shift in the optical UV absorption of Ga:ZnO films grown under high power density occurs

and results in the absorption effect through Urbach-tail states with increasi

ng the doping defect density in the Ga:ZnO thin films. The average transmittance of Ga:ZnO films is above 80% in the visible spectrum range.

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references

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