Failure Mechanism and Lifetime Prediction Modeling of IGBT Power Electronic Devices

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Failure Mechanism and Lifetime Prediction Modeling of IGBT Power Electronic Devices

更新时间：2025-07-09

- Failure Mechanism and Lifetime Prediction Modeling of IGBT Power Electronic Devices
- Vol. 45, Issue 10, Pages: 65-71(2011)
- 作者机构：
  
  海军工程大学舰船综合电力技术国防科技重点实验室,武汉,430033
- 作者简介：
- 基金信息：
- DOI：
  CLC： TM322
- Online First：10 October 2011，
  
  Published：2011
- 稿件说明：
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Failure Mechanism and Lifetime Prediction Modeling of IGBT Power Electronic Devices[J]. 2011, 45(10): 65-71.
DOI：

Failure Mechanism and Lifetime Prediction Modeling of IGBT Power Electronic Devices[J]. 2011, 45(10): 65-71. DOI：

摘要

针对绝缘栅双极型晶体管(IGBT)的主要失效机理

特别是键合引线失效过程

采用高速红外热成像仪对键合引线失效过程的结温温度场分布实时探测试验

同时对IGBT模块电气与传热特性进行监控

发现IGBT在高结温与高温度梯度时主要的失效形式是键合引线翘曲与熔化

在外部特性上表现为集射极压降值增大

而热阻基本不变.提出了提高器件可靠性、延长使用寿命的方法.在加速寿命试验原理的基础上

通过开展高温下的功率循环测试

并对试验数据进行拟合

得到了加入电流等级和最高工作结温的改进寿命预测模型.通过试验数据误差分析对比

发现该模型精度较原有模型在不同测试条件下均有提高

适用范围从80 K拓宽到100 K.

Abstract

Power electronic devices often fail due to over temperature

and the operational performance and longtime reliability are affected. Here the failure mechanism is analyzed in detail

especially for the failure process of the Al wires and wire-bonding

which is demonstrated by the detection of the fluctuation characteristic of the junction temperature field distribution by mid-wave infrared imaging camera. It is found that the main failures at high junction temperature and under high temperature gradient are lift-off and burn of the wire-bonding

while V

gradually gets lower and the thermal resistance remains steady. Then the methodology to extend lifetime and improve operation reliability is presented

and the theory of the fast power cycling test is provided. An improved lifetime prediction model is obtained by fitting the test data

where the current rate and peak juncti

on temperature are also considered. The temperature application range is widened from 80 K to 100 K.

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Keywords

references

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