Three kinds of classical growth morphologies appearing in the physical vapor transport(PVT)growth process of silicon carbide bulk crystal are analyzed with regard to thermal stress by finite elements method. The results indicate that the maximum of thermal stress is located in the adjacent region of the silicon carbide and the graphite crucible lid. The distributions of the temperature field
and the corresponding thermal strain field and equivalent stress field get more homogenous in the flat growth morphology than that in the concave and convex growth morphology. And stress concentration appears at the center of the concave growth morphology and at the margin of the convex growth morphology. For improving the crystal quality
transition layer of silicon carbide formed by deposition or reaction on the graphite crucible lid is suggested to reduce the thermal stress
and the growth system of SiC crystal should be modified to maintain crystal growth in the flat morphology.
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