The junction temperature characteristic fluctuation and temperature distribution profiles of the IGBT power module under transient impulse intermittent operation with the same external operation condition is analyzed for different simulation models
which is implemented by the power loss and temperature field coupling relation. The distribution of temperature profiles on the chip surface is detected by a high-speed mid-wave infrared imaging camera. The real time detection shows that under transient pulse intermittent operation the temperature of the chip surface rises quickly and then slowly for a certain heat sink situation and little duty ratio
while the junction temperature drops quickly in the intermittent time
and it is possible to breaking the restriction of the peak operational current. The simulation models are applied to predicting junction-case temperature drop and fluctuation characteristic of junction under temperature different working conditions.
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