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采用数值方法研究了介质阻挡放电涡发生器(DBD-VGs)等离子体激励条件下的壁面气膜冷却特性
分析了不同归一化激励强度与归一化激励频率条件下壁面附近的流场结构及冷却性能
获得了DBD-VGs等离子体激励对壁面附近冷、热气流运动的影响机制。研究发现:DBD-VGs等离子体激励有利于诱导冷却孔下游壁面附近流场形成反肾形涡对
抑制原有肾形涡对结构的发展
进而减少近壁面冷气的抬升
改善壁面气膜冷却性能。当归一化激励强度从20提升至50、激励频率从0.625提升至2.5时
冷却孔下游壁面与冷气的展向接触范围逐渐扩展
壁面气膜冷却性能明显增强。当归一化激励强度从0提升至40时
壁面中线与展向平均的气膜冷却效率极值分别增大了60%及420%;当归一化激励频率从0提升至1.25时
壁面中线和展向平均的气膜冷却效率极值分别增大了50%及286.7%。与单介质阻挡放电(SDBD)等离子体激励相比
DBD-VGs等离子体激励可在较低的激励参数下获得较高的展向平均气膜冷却效率;在相同激励参数下
DBD-VGs等离子体激励使冷却孔下游壁面与冷气展向接触程度的提升效果更为显著。
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