低温增强型非晶铟镓锌氧薄膜晶体管特性研究

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低温增强型非晶铟镓锌氧薄膜晶体管特性研究

更新时间：2025-07-09

- 低温增强型非晶铟镓锌氧薄膜晶体管特性研究
- Issue 12, Pages: 1-5+18(2015)
- 作者机构：
  
  1. 西安交通大学电子与信息工程学院
  2. 西安交通大学固态照明工程研究中心
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN321.5
- Published：2015
- 稿件说明：
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[J]. 2015, (12): 1-5+18.
DOI：

[J]. 2015, (12): 1-5+18. DOI：

摘要

在室温下利用射频磁控溅射沉积非晶铟镓锌氧化物（a-IGZO）薄膜作为有源沟道层

分别制备了顶栅和底栅结构的薄膜晶体管（a-IGZO-TFTs）原型器件

同时研究了沟道层生长参数及后退火工艺对器件特性的影响。研究及实验结果表明:当增加底栅结构a-IGZO-TFTs器件IGZO沟道层氧气流量时

器件输出特性由耗尽型转变为增强型;当沟道宽长比为120∶20时

获得了4.8×10～5的开关电流比

亚阈值摆幅为1.2V/dec

饱和迁移率达到11cm

/（V·s）。沟道层氧气流量为2cm

/min的底栅结构a-IGZO-TFT器件在大气中经过300℃退火30min后

器件由耗尽型转变为增强型

获得4×10～3的开关电流比。

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references

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